Samsung electronics co., ltd. (20240234250). INTEGRATED CIRCUIT DEVICE simplified abstract
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INTEGRATED CIRCUIT DEVICE
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INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240234250 titled 'INTEGRATED CIRCUIT DEVICE
The abstract of the patent application describes an integrated circuit (IC) device with fin-type active regions protruding from the substrate to define a trench region, source/drain regions, device isolation film, etch stop structure, via power rail, and backside power rail.
- Fin-type active regions protrude from the substrate to define a trench region.
- Source/drain regions are located on the fin-type active regions.
- Device isolation film separates the active regions from the substrate.
- Etch stop structure fills the trench region between the substrate and the device isolation film.
- Via power rail connects the fin-type active regions and source/drain regions, passing through the etch stop structure.
- Backside power rail passes through the substrate and is in contact with the via power rail.
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Power management systems
Problems Solved: - Efficient power distribution in IC devices - Enhanced device isolation and performance
Benefits: - Improved power efficiency - Enhanced device reliability - Compact design for space-saving
Commercial Applications: Title: "Advanced Power Management Solutions for Integrated Circuits" This technology can be used in various industries such as consumer electronics, automotive, and telecommunications for efficient power management in IC devices.
Questions about the technology: 1. How does the etch stop structure contribute to the performance of the IC device? The etch stop structure helps in defining the trench region and provides a barrier between the substrate and the device isolation film, enhancing device isolation and performance.
2. What are the advantages of using a backside power rail in the IC device? The backside power rail allows for efficient power distribution through the substrate, improving overall power management in the integrated circuit.
Original Abstract Submitted
an integrated circuit (ic) device includes a substrate, a pair of fin-type active regions protruding from the substrate to define a trench region on the substrate, the fin-type active regions extending in a first lateral direction, a pair of source/drain regions on the fin-type active regions, respectively, a device isolation film in the trench region, the device isolation film apart from the substrate in a vertical direction, an etch stop structure filling at least a portion of the trench region between the substrate and the device isolation film, a via power rail between the pair of fin-type active regions and between the pair of source/drain regions, the via power rail passing through at least a portion of the etch stop structure, and a backside power rail passing through the substrate, the backside power rail in contact with one end of the via power rail.
