Samsung electronics co., ltd. (20240224533). INTEGRATED CIRCUIT DEVICE INCLUDING VERTICAL MEMORY DEVICE simplified abstract
Contents
INTEGRATED CIRCUIT DEVICE INCLUDING VERTICAL MEMORY DEVICE
Organization Name
Inventor(s)
Changsun Hwang of Suwon-si (KR)
Youngjin Kwon of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE INCLUDING VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224533 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING VERTICAL MEMORY DEVICE
The abstract describes an integrated circuit device with a substrate containing cell, peripheral circuit, and interconnection regions, as well as cell stack structures and a dummy stack structure.
- Simplified Explanation: The patent application discusses a device with different regions on a substrate, including cell and peripheral circuit regions, along with stack structures for cells and a dummy stack structure.
- Key Features and Innovation:
- Substrate with distinct regions for different circuit components - Cell stack structures for organizing insulating layers and word line structures - Dummy stack structure for support in the peripheral circuit region
- Potential Applications:
- Semiconductor manufacturing - Memory devices - Integrated circuit design
- Problems Solved:
- Efficient organization of circuit components - Improved performance and reliability of integrated circuits
- Benefits:
- Enhanced functionality of integrated circuits - Better integration of cell and peripheral circuit regions - Increased efficiency in semiconductor manufacturing
- Commercial Applications:
- Memory chip production - Semiconductor industry applications - Electronics manufacturing
- Prior Art:
- Researchers can explore prior patents related to integrated circuit design, semiconductor manufacturing, and memory device technology.
- Frequently Updated Research:
- Stay informed about the latest advancements in semiconductor technology, memory devices, and integrated circuit design.
Questions about Integrated Circuit Device: 1. What are the potential commercial applications of this integrated circuit device? 2. How does the dummy stack structure contribute to the overall performance of the device?
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Original Abstract Submitted
an integrated circuit device includes: a substrate having a cell region, a peripheral circuit region, and an interconnection region between the cell region and the peripheral circuit region; a first cell stack structure and a second cell stack structure on the first cell stack structure, each including a plurality of insulating layers and a plurality of word line structures alternately stacked on the substrate; and a dummy stack structure located at a same vertical level as the second cell stack structure, and including a plurality of dummy insulating layers and a plurality of dummy support layers alternately stacked in the peripheral circuit region.
