Samsung electronics co., ltd. (20240224531). MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS simplified abstract
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MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS
Organization Name
Inventor(s)
MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224531 titled 'MEMORY DEVICE INCLUDING STACKED PASS TRANSISTORS
The memory device described in the abstract includes a memory block with wordlines stacked vertically and extending horizontally, as well as a pass transistor block with pass transistors stacked vertically to transmit driving signals to the wordlines.
- Pass transistors have a body region with upper and lower surfaces, side surfaces facing horizontally, and front and rear surfaces facing in another horizontal direction.
- Each pass transistor includes a first source-drain electrode on one side surface, a second source-drain electrode on the other side surface connected to a wordline, and a vertical gate electrode on a surface.
- Key Features and Innovation:**
- Memory device with vertically stacked wordlines and pass transistors.
- Pass transistors transmit driving signals to wordlines efficiently.
- Pass transistors have a unique structure for effective signal transmission.
- Potential Applications:**
- Semiconductor memory devices.
- Integrated circuits.
- Computer memory systems.
- Problems Solved:**
- Efficient transmission of driving signals in memory devices.
- Improved performance and reliability of memory blocks.
- Benefits:**
- Enhanced data storage and retrieval capabilities.
- Increased speed and efficiency in memory operations.
- Higher overall performance of memory devices.
- Commercial Applications:**
- Memory chip manufacturing industry.
- Electronics and computer hardware companies.
- Research and development in semiconductor technology.
- Prior Art:**
Prior art related to this technology may include patents or research papers on vertical memory structures, pass transistor configurations, and memory block designs in semiconductor devices.
- Frequently Updated Research:**
Researchers may be exploring advancements in pass transistor technology, vertical memory integration, and optimization of memory block layouts for improved performance and scalability.
- Questions about Memory Device Technology:**
1. How does the unique structure of pass transistors in this memory device contribute to its efficiency? 2. What are the potential challenges in scaling up this memory device technology for larger storage capacities?
Original Abstract Submitted
a memory device including a memory block including a plurality of wordlines stacked in a vertical direction and extending in a first horizontal direction; and a pass transistor block including a plurality of pass transistors stacked in the vertical direction, wherein the plurality of pass transistors are configured to transmit a plurality of driving signals respectively to the plurality of wordlines, wherein each pass transistor of the plurality of pass transistors includes: a body region having an upper surface and a lower surface which face in the vertical direction, a first side surface and a second side surface which face in the first horizontal direction, and a front surface and a rear surface which face in a second horizontal direction; a first source-drain electrode on the first side surface, and configured to receive a corresponding driving signal of the plurality of driving signals; a second source-drain electrode on the second side surface, wherein the second source-drain electrode is electrically connected to a side surface of a corresponding wordline of the plurality of wordlines; and a first vertical gate electrode on a first surface from among the front surface and the rear surface.
