Samsung electronics co., ltd. (20240224530). VERTICAL NAND FLASH MEMORY DEVICE simplified abstract

VERTICAL NAND FLASH MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seungdam Hyun of Suwon-si (KR)

Kyunghun Kim of Suwon-si (KR)

Sunho Kim of Suwon-si (KR)

Hyungyung Kim of Suwon-si (KR)

Kwangmin Park of Suwon-si (KR)

Seungyeul Yang of Suwon-si (KR)

Gukhyon Yon of Suwon-si (KR)

Minhyun Lee of Suwon-si (KR)

Seokhoon Choi of Suwon-si (KR)

Hoseok Heo of Suwon-si (KR)

VERTICAL NAND FLASH MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240224530 titled 'VERTICAL NAND FLASH MEMORY DEVICE

The abstract describes a vertical NAND flash memory device with multiple cell arrays, each containing a channel layer, a charge trap layer with a matrix of dielectric and charge trap material, and gate electrodes.

• Vertical NAND flash memory device with multiple cell arrays
• Each cell array includes a channel layer and a charge trap layer
• Charge trap layer has a matrix of dielectric and charge trap material
• Includes anti-ferroelectric nanocrystals or ferroelectric nanocrystals
• Multiple gate electrodes provided on the charge trap layer

Potential Applications: - Data storage devices - Solid-state drives - Mobile devices - Embedded systems - Cloud computing servers

Problems Solved: - Increased data storage capacity - Faster data access speeds - Enhanced reliability and durability - Improved energy efficiency - Higher performance in various applications

Benefits: - Higher data storage density - Faster data transfer rates - Extended lifespan of memory devices - Reduced power consumption - Enhanced overall system performance

Commercial Applications: Title: Vertical NAND Flash Memory Devices: Commercial Applications and Market Implications Description: This technology can be utilized in various commercial applications such as data centers, consumer electronics, automotive systems, and industrial automation, leading to improved data storage capabilities and faster processing speeds.

Questions about Vertical NAND Flash Memory Devices: 1. How does the inclusion of anti-ferroelectric nanocrystals or ferroelectric nanocrystals impact the performance of the memory device? 2. What are the key differences between vertical NAND flash memory devices and traditional NAND flash memory devices in terms of data storage and access speeds?

Original Abstract Submitted

a vertical nand flash memory device includes a plurality of cell arrays, where each cell array of the plurality of cell arrays includes a channel layer, a charge trap layer provided on the channel layer, the charge trap layer including a matrix comprising a dielectric and a charge trap material in the matrix and including anti-ferroelectric nanocrystals or ferroelectric nanocrystals, and a plurality of gate electrodes provided on the charge trap layer.