Samsung electronics co., ltd. (20240224525). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hyo Joon Ryu of Hwaseong-si (KR)
Young Hwan Son of Hwaseong-si (KR)
Jung Hoon Jun of Hwaseong-si (KR)
Kohji Kanamori of Seongnam-si (KR)
Jee Hoon Han of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224525 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
The semiconductor memory described in the patent application includes a complex vertical structure that penetrates metallic lines and a semiconductor conduction line, enhancing the efficiency and performance of the memory device.
- The memory device features metallic lines on a substrate, with an uppermost metallic line and a semiconductor conduction line on top.
- A vertical structure penetrates the semiconductor conduction line and metallic lines, consisting of an upper channel film, a first lower channel film, and an upper connection channel film.
- A cutting line is included through the metallic lines and the semiconductor conduction line, with a first upper cutting line through the semiconductor conduction line and a first lower cutting line through the metallic lines.
- The width of the first upper cutting line is greater than the width of an extension line of a sidewall of the first lower cutting line.
Potential Applications: - This technology can be applied in various semiconductor memory devices to improve their performance and efficiency. - It can be utilized in electronic devices that require high-speed data processing and storage capabilities.
Problems Solved: - Enhances the functionality and speed of semiconductor memory devices. - Improves the overall performance of electronic devices that rely on memory storage.
Benefits: - Increased efficiency and speed in data processing. - Enhanced performance of electronic devices. - Improved reliability and durability of semiconductor memory devices.
Commercial Applications: Title: Advanced Semiconductor Memory Technology for Enhanced Performance This technology can be commercialized in the production of high-performance electronic devices such as smartphones, computers, and servers, where fast and reliable memory storage is crucial for optimal functionality.
Questions about Semiconductor Memory Technology: 1. How does the vertical structure in the semiconductor memory device contribute to its efficiency and performance? 2. What sets this semiconductor memory technology apart from traditional memory devices in terms of speed and reliability?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor memory technology to ensure optimal performance and efficiency in electronic devices.
Original Abstract Submitted
a semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.
