Samsung electronics co., ltd. (20240224523). NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Dongsung Choi of Suwon-si (KR)
Changheon Cheon of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224523 titled 'NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract describes a non-volatile memory device with a unique structure including gate electrodes, mold insulating layers, a channel structure, and a cell contact.
- The gate electrodes are stacked in a step shape, providing a compact design.
- The cell contact is connected to a first gate electrode but not to a second gate electrode, improving electrical connections.
- The first gate electrode includes an extension portion, a pad portion with greater vertical thickness, and a connection portion with insulating rings, enhancing performance.
Potential Applications: - This technology can be used in various electronic devices requiring non-volatile memory storage, such as smartphones, tablets, and laptops.
Problems Solved: - The design addresses the need for efficient and reliable non-volatile memory storage solutions in modern electronic devices.
Benefits: - Improved electrical connections and compact design lead to enhanced performance and reliability in non-volatile memory devices.
Commercial Applications: - The technology can be applied in the consumer electronics industry, leading to faster and more reliable devices with increased storage capacity.
Questions about the technology: 1. How does the unique structure of the gate electrodes improve the performance of the non-volatile memory device? 2. What are the specific advantages of the cell contact design in this technology?
Frequently Updated Research: - Stay informed about advancements in non-volatile memory technology and related innovations to understand the latest trends and developments in the field.
Original Abstract Submitted
a non-volatile memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers, wherein the plurality of gate electrodes are stacked in a step shape, a channel structure that extends through the mold structure, and a cell contact that extends through the mold structure, the cell contact is connected to a first gate electrode, and the cell contact is not electrically connected to a second gate electrode among the plurality of gate electrodes, wherein the first gate electrode includes: an extension portion; a pad portion having a vertical thickness greater than a vertical thickness of the extension portion; and a connection portion that electrically connects the pad portion to the cell contact, the connection portion has a vertical thickness less than a vertical thickness of the pad portion, and one or more first insulating rings on the connection portion.
