Samsung electronics co., ltd. (20240224522). NON-VOLATILE MEMORY DEVICE simplified abstract

NON-VOLATILE MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Homoon Shin of Suwon-si (KR)

Jonghoon Park of Suwon-si (KR)

Juyoung Yang of Suwon-si (KR)

Jungseok Hwang of Suwon-si (KR)

Sunghoon Kim of Suwon-si (KR)

Pansuk Kwak of Seoul (KR)

Ahreum Kim of Suwon-si (KR)

Myunghun Lee of Suwon-si (KR)

Changyeon Yu of Suwon-si (KR)

Mookyu Bae of Suwon-si (KR)

Sungun Lee of Suwon-si (KR)

NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240224522 titled 'NON-VOLATILE MEMORY DEVICE

The abstract of the patent application describes a non-volatile memory device with a unique structure that includes a memory cell region and a peripheral circuit region.

• The memory cell region consists of channel structures, a metal layer, a capping layer, an upper insulation layer, and dummy contacts.
• The metal layer contains bit lines and dummy bit lines connected to the channel structures.
• The dummy contacts provide a migration path for hydrogen ions in the upper insulation layer.

Potential Applications: - Non-volatile memory devices in electronic devices - Data storage in consumer electronics and industrial applications

Problems Solved: - Enhanced data storage capacity - Improved reliability and performance of non-volatile memory devices

Benefits: - Increased data storage efficiency - Enhanced data retention and reliability - Improved overall performance of electronic devices

Commercial Applications: Title: Advanced Non-Volatile Memory Devices for Enhanced Data Storage This technology can be utilized in various electronic devices such as smartphones, tablets, laptops, and servers to improve data storage capacity and performance.

Questions about the technology: 1. How does the migration path for hydrogen ions in the upper insulation layer improve the performance of the memory device? 2. What are the specific advantages of using dummy contacts in the memory cell region of the device?

Original Abstract Submitted

a non-volatile memory device may include a memory cell region and a peripheral circuit region positioned below the memory cell region in the vertical direction. the memory cell region may include a plurality of channel structures extending in a vertical direction, a first metal layer over the plurality of channel structures, a first capping layer over the first metal layer, a first upper insulation layer over the first capping layer, and at least one first dummy contact penetrating through the first capping layer. the first metal layer may include a plurality of bit lines and at least one dummy bit line. the bit lines may be respectively connected to the plurality of channel structures. the at least one first dummy contact may be on the at least one dummy bit line and may provide a migration path for hydrogen ions in the first upper insulation layer.