Samsung electronics co., ltd. (20240224521). VERTICAL SEMICONDUCTOR DEVICES simplified abstract
Contents
VERTICAL SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Shinhwan Kang of Suwon-si (KR)
Younghwan Son of Suwon-si (KR)
Kohji Kanamori of Suwon-si (KR)
VERTICAL SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224521 titled 'VERTICAL SEMICONDUCTOR DEVICES
The abstract describes a vertical semiconductor device with a stacked structure and multiple channel structures passing through it.
- The stacked structure consists of insulation layers and gate patterns stacked alternately on a substrate.
- The gate patterns, including first gate patterns, have a sacrificial pattern between them.
- The channel structures extend to the upper surface of the substrate and include charge storage structures and channels.
- Some channel structures pass through the sacrificial pattern in the stacked structure to the upper surface of the substrate.
Potential Applications: - This technology can be used in the development of high-performance vertical semiconductor devices for various electronic applications. - It can be applied in memory devices, sensors, and other semiconductor devices requiring efficient charge storage and channel structures.
Problems Solved: - Provides a compact and efficient design for vertical semiconductor devices. - Enhances the performance and functionality of semiconductor devices by optimizing the channel structures and charge storage.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced charge storage capabilities leading to better functionality. - Compact design for space-saving in electronic applications.
Commercial Applications: - The technology can be utilized in the production of advanced memory devices, sensors, and other semiconductor components. - It has potential applications in the consumer electronics industry, automotive sector, and IoT devices market.
Questions about Vertical Semiconductor Device: 1. How does the vertical semiconductor device differ from traditional horizontal semiconductor devices?
- The vertical semiconductor device offers a more compact design and efficient charge storage capabilities compared to horizontal devices.
2. What are the key advantages of using a stacked structure in semiconductor devices?
- The stacked structure allows for better integration of gate patterns and insulation layers, optimizing the performance of the device.
Original Abstract Submitted
a vertical semiconductor device may include a stacked structure and a plurality of channel structures. the stacked structure may include insulation layers and gate patterns alternately and repeatedly stacked on a substrate. the stacked structure may extend in a first direction parallel to an upper surface of the substrate. the gate patterns may include at least ones of first gate patterns. the stacked structure may include a sacrificial pattern between the first gate patterns. the channel structures may pass through the stacked structure. each of the channel structures may extend to the upper surface of the substrate, and each of the channel structures may include a charge storage structure and a channel. ones of the channel structures may pass through the sacrificial pattern in the stacked structure to the upper surface of the substrate, and may extend to the upper surface of the substrate.
