Samsung electronics co., ltd. (20240224514). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract

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INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Junhyoung Kim of Suwon-si (KR)

Jimo Gu of Suwon-si (KR)

Jiyoung Kim of Suwon-si (KR)

Sukkang Sung of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240224514 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation: The integrated circuit device described in the patent application includes a substrate with a memory cell area and a connection area. It features a gate stack with multiple gate electrodes arranged vertically apart from each other on the substrate. Additionally, there are gate connection openings in the connection area that extend inward from the upper surface of the gate stack, exposing one gate electrode at the bottom of each opening. Gate connection structures cover the inner side surfaces of the openings and are connected to the gate electrodes. Gate contacts are connected to the upper ends of the gate connection structures.

  • The device includes a substrate with a memory cell area and a connection area.
  • It features a gate stack with multiple gate electrodes arranged vertically apart from each other.
  • Gate connection openings in the connection area expose one gate electrode at the bottom of each opening.
  • Gate connection structures cover the inner side surfaces of the openings and are connected to the gate electrodes.
  • Gate contacts are connected to the upper ends of the gate connection structures.

Potential Applications: 1. Memory devices 2. Semiconductor manufacturing 3. Integrated circuit design

Problems Solved: 1. Efficient connection between gate electrodes and external components 2. Enhanced performance of memory cells 3. Improved integration of components in semiconductor devices

Benefits: 1. Increased reliability of integrated circuits 2. Higher efficiency in data storage and processing 3. Enhanced overall performance of electronic devices

Commercial Applications: The technology described in the patent application could have significant implications in the semiconductor industry, particularly in the development of advanced memory devices and integrated circuits. It could be utilized in various commercial applications such as consumer electronics, telecommunications, and computing.

Prior Art: Readers interested in exploring prior art related to this technology may consider researching patents and publications in the fields of semiconductor manufacturing, memory devices, and integrated circuit design.

Frequently Updated Research: Researchers in the semiconductor industry are constantly exploring new ways to improve the performance and efficiency of integrated circuits. Stay updated on the latest advancements in gate electrode connection structures and memory cell integration for potential breakthroughs in the field.

Questions about Integrated Circuit Device: 1. How does the gate stack arrangement contribute to the overall performance of the integrated circuit device? 2. What are the key advantages of the gate connection structures in this technology?


Original Abstract Submitted

an integrated circuit device includes a substrate including a memory cell area and a connection area, a gate stack including a plurality of gate electrodes apart from each other in a vertical direction on the substrate, a plurality of gate connection openings arranged in the connection area to extend inward from an upper surface of the gate stack, one of the plurality of gate electrodes being exposed at a bottom surface of each of the plurality of gate connection openings, a plurality of gate connection structures respectively covering at least inner side surfaces of the plurality of gate connection openings, each of the plurality of gate connection structures being connected with the one gate electrode, and a plurality of gate contacts respectively connected to upper ends of the plurality of gate connection structures.