Samsung electronics co., ltd. (20240224502). SEMICONDUCTOR MEMORY DEVICES simplified abstract
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SEMICONDUCTOR MEMORY DEVICES
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SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224502 titled 'SEMICONDUCTOR MEMORY DEVICES
The semiconductor memory device described in the abstract includes a substrate with a memory cell region and multiple capacitor structures within that region. Each capacitor structure consists of a lower electrode, a capacitor dielectric layer, and an upper electrode. The lower electrode is made up of a first lower electrode, a second lower electrode above the first one, and a connecting lower electrode that links the two. The upper electrode is a bent upper electrode that overlaps the connecting lower electrode horizontally, with a bent portion.
- The memory device features a unique capacitor structure design with multiple layers for efficient performance.
- The lower electrode configuration allows for improved connectivity and functionality within the memory cell region.
- The bent upper electrode design optimizes space utilization and enhances overall memory device performance.
- The capacitor dielectric layer ensures proper insulation and functionality of the capacitor structures.
- The innovative design of the memory device contributes to increased memory storage capacity and efficiency.
Potential Applications: This technology can be applied in various semiconductor memory devices, such as DRAMs and SRAMs, to enhance their performance and storage capacity.
Problems Solved: This technology addresses the need for improved memory cell structures and connectivity in semiconductor memory devices.
Benefits: The benefits of this technology include increased memory storage capacity, improved performance, and enhanced efficiency in semiconductor memory devices.
Commercial Applications: This technology has commercial applications in the semiconductor industry for the development of advanced memory devices with higher storage capacities and improved performance.
Questions about Semiconductor Memory Device: 1. How does the unique capacitor structure design contribute to the performance of the memory device? 2. What are the potential applications of this technology in the semiconductor industry?
Frequently Updated Research: Researchers are continually exploring new materials and designs to further enhance the performance and efficiency of semiconductor memory devices.
Original Abstract Submitted
a semiconductor memory device includes a substrate having a memory cell region and a plurality of capacitor structures in the memory cell region of the substrate, each of the plurality of capacitor structures including a lower electrode, a capacitor dielectric layer, and an upper electrode, wherein the lower electrode includes a first lower electrode, a second lower electrode above the first lower electrode, and a connecting lower electrode connecting a top end of the first lower electrode to a bottom end of the second lower electrode, wherein the upper electrode includes a bent upper electrode overlapping the connecting lower electrode in a horizontal direction, and the bent upper electrode includes a bent portion.
