Samsung electronics co., ltd. (20240224494). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Huijung Kim of Seongnam-si (KR)
Sungwon Yoo of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224494 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of various components such as word lines, semiconductor patterns, cell capacitors, bit lines, and electrodes.
- The device includes a first word line and a second word line extending in a vertical direction, with the second word line spaced apart from the first word line in a horizontal direction.
- There are first and second semiconductor patterns of ring-shaped horizontal cross-sections surrounding the first and second word lines, respectively, and constituting portions of cell transistors.
- A cell capacitor is situated between the first and second semiconductor patterns, containing a first electrode, a second electrode, and a capacitor dielectric film.
- A first bit line and a second bit line extend in horizontal directions opposite the cell capacitor with respect to the first and second semiconductor patterns.
- The device is designed to efficiently store and retrieve data in a compact and organized manner.
Potential Applications: - This technology can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems, servers, and other computing devices.
Problems Solved: - The semiconductor memory device addresses the need for high-speed data storage and retrieval in electronic devices. - It provides a compact and efficient solution for storing large amounts of data in a small space.
Benefits: - Improved data storage and retrieval speeds. - Enhanced memory capacity in electronic devices. - Compact design for space-saving in devices.
Commercial Applications: Title: Semiconductor Memory Device for High-Speed Data Storage This technology has significant commercial potential in the consumer electronics market, data storage industry, and computing sector. It can revolutionize the way data is stored and accessed in various devices, leading to faster performance and increased efficiency.
Questions about Semiconductor Memory Device: 1. How does the ring-shaped semiconductor pattern contribute to the efficiency of the memory device? 2. What are the potential implications of this technology on the future of data storage in electronic devices?
Original Abstract Submitted
a semiconductor memory device includes: a first word line extending in a vertical direction; a second word line spaced apart from the first word line in a first horizontal direction and extending in the vertical direction; a first semiconductor pattern of a ring-shaped horizontal cross-section surrounding the first word line and constituting a portion of a first cell transistor; a second semiconductor pattern of a ring-shaped horizontal cross-section surrounding the second word line and constituting a portion of a second cell transistor; a cell capacitor between the first semiconductor pattern and the second semiconductor pattern and including a first electrode, a second electrode, and a capacitor dielectric film; a first bit line opposite the cell capacitor with respect to the first semiconductor pattern and extending in a second horizontal direction; and a second bit line opposite the cell capacitor with respect to the second semiconductor pattern.
