Samsung electronics co., ltd. (20240224487). Semiconductor Devices Including FINFET Structures with Increased Gate Surface simplified abstract
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Semiconductor Devices Including FINFET Structures with Increased Gate Surface
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Semiconductor Devices Including FINFET Structures with Increased Gate Surface - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240224487 titled 'Semiconductor Devices Including FINFET Structures with Increased Gate Surface
The semiconductor device described in the patent application includes a field insulating film on a substrate and a fin-type pattern made of a specific material on the substrate, with a first sidewall and an opposing second sidewall.
- The fin-type pattern consists of a first portion that protrudes from the upper surface of the field insulating film, a second portion on top of the first portion, and a third portion on the second portion, capped by a rounded top surface.
- The first sidewall of the fin-type pattern has an undulated profile that spans the first, second, and third portions.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It may find applications in the development of high-performance integrated circuits and microprocessors.
Problems Solved: - Provides a more efficient and precise method for creating fin-type patterns on semiconductor devices. - Enhances the performance and functionality of semiconductor devices by improving the structure of the fin-type patterns.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced precision and reliability in the manufacturing process. - Potential for higher processing speeds and reduced power consumption in electronic devices.
Commercial Applications: - This technology could be valuable for semiconductor manufacturers looking to enhance the performance of their products and gain a competitive edge in the market.
Questions about the Technology: 1. How does the undulated profile of the first sidewall of the fin-type pattern contribute to the overall performance of the semiconductor device? 2. What specific advantages does capping the third portion of the fin-type pattern with a rounded top surface provide in terms of functionality and efficiency?
Original Abstract Submitted
a semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. the fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. a third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.
