Samsung electronics co., ltd. (20240222550). SEMICONDUCTOR LIGHT EMITTING DEVICE simplified abstract
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SEMICONDUCTOR LIGHT EMITTING DEVICE
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SEMICONDUCTOR LIGHT EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222550 titled 'SEMICONDUCTOR LIGHT EMITTING DEVICE
The semiconductor light emitting device described in the patent application consists of a light emitting structure with a first semiconductor layer, a second semiconductor layer, and an active layer that emits light in the range of 620 nm to 750 nm.
- The device includes a first electrode connected to the first semiconductor layer, a second electrode connected to the second semiconductor layer, a capping layer with a specific refractive index, and an encapsulation layer with a lower refractive index than the capping layer.
- The capping layer has a refractive index between 2.05 to 2.58, while the encapsulation layer has a lower refractive index.
- This design helps in improving the efficiency and performance of the light emitting device by controlling the light emission and reflection within the structure.
- The specific refractive index of the capping layer plays a crucial role in enhancing the light extraction efficiency of the device.
- The encapsulation layer further aids in reducing light losses and improving the overall optical properties of the device.
Potential Applications: - This technology can be used in various lighting applications such as LED displays, automotive lighting, and general illumination. - It can also find applications in optical communication systems and medical devices.
Problems Solved: - Enhances light extraction efficiency. - Improves optical properties of the device. - Reduces light losses within the structure.
Benefits: - Higher efficiency in light emission. - Improved performance and reliability. - Enhanced optical properties for better functionality.
Commercial Applications: Title: Advanced Semiconductor Light Emitting Device for Enhanced Efficiency This technology can be commercialized for LED lighting products, display technologies, optical communication systems, and medical devices. The improved efficiency and performance can lead to cost savings and better user experience in various applications.
Questions about Semiconductor Light Emitting Device:
1. How does the specific refractive index of the capping layer impact the performance of the light emitting device? The specific refractive index of the capping layer plays a crucial role in enhancing the light extraction efficiency of the device by controlling light emission and reflection within the structure.
2. What are the potential commercial applications of this semiconductor light emitting device technology? The technology can be used in LED lighting products, display technologies, optical communication systems, and medical devices, offering improved efficiency and performance in various applications.
Original Abstract Submitted
a semiconductor light emitting device, including a light emitting structure comprising a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type which is different from the first conductivity type, and an active layer between the first semiconductor layer and the second semiconductor layer and configured to emit light having a wavelength in a range of about 620 nm to about 750 nm; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a capping layer on a top surface of the light emitting structure and having a first refractive index in a range of about 2.05 to about 2.58; and an encapsulation layer on the capping layer and on the light emitting structure, and having a second refractive index which is less than the first refractive index.
