Samsung electronics co., ltd. (20240222524). TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR simplified abstract
TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR
Organization Name
Inventor(s)
Junyoung Kwon of Suwon-si (KR)
Kyung-Eun Byun of Suwon-si (KR)
TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222524 titled 'TRANSISTOR, METHOD OF MANUFACTURING THE TRANSISTOR, ELECTRONIC DEVICE INCLUDING TRANSISTOR, AND ELECTRONIC APPARATUS INCLUDING THE TRANSISTOR
Simplified Explanation: The patent application describes a field effect transistor with a high-k gate insulating layer and composite electrode layers to reduce contact resistance.
- The field effect transistor includes a channel layer, high-k gate insulating layer, composite electrode layers, and a gate electrode layer.
- At least one composite electrode layer has a contact resistance reducing layer and a conductive layer.
- The conductive layer is separated from the channel layer to improve transistor performance.
Key Features and Innovation:
- Field effect transistor design with high-k gate insulating layer.
- Composite electrode layers to reduce contact resistance.
- Improved transistor performance with separated conductive layer.
Potential Applications:
- Semiconductor devices.
- Integrated circuits.
- Electronic devices requiring high-performance transistors.
Problems Solved:
- High contact resistance in field effect transistors.
- Performance limitations in traditional transistor designs.
Benefits:
- Enhanced transistor performance.
- Improved efficiency in electronic devices.
- Increased reliability in semiconductor applications.
Commercial Applications: Potential commercial applications include:
- Consumer electronics.
- Telecommunications equipment.
- Automotive electronics.
Questions about Field Effect Transistors: 1. How does the high-k gate insulating layer improve transistor performance? 2. What are the advantages of using composite electrode layers in field effect transistors?
Original Abstract Submitted
provided are a field effect transistor, a method of manufacturing the field effect transistor, and an electronic device and an electronic apparatus each including the field effect transistor. the field effect transistor includes a channel layer disposed on a substrate, a high-k gate insulating layer disposed on the channel layer, a first composite electrode layer connected to a first side of the channel layer, a second composite electrode layer connected to a second side of the channel layer, and a gate electrode layer disposed on the gate insulating layer. at least one of the first and second composite electrode layers includes a contact resistance reducing layer in contact with the channel layer and a conductive layer in contact with the contact resistance reducing layer. the conductive layer is spaced apart from the channel layer.
