Samsung electronics co., ltd. (20240222408). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Jonghyeon Noh of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222408 titled 'IMAGE SENSOR
The abstract describes an image sensor with a pixel isolation structure that includes a dielectric layer, semiconductor patterns with dopants, and insulating layers to improve photoelectric conversion efficiency.
- The image sensor includes a substrate with a unit pixel region for photoelectric conversion.
- A pixel isolation trench defines the unit pixel region and extends horizontally.
- The pixel isolation structure in the trench includes a dielectric layer, semiconductor patterns with dopants, and insulating layers.
- The photoelectric conversion region has a doped region on the outer wall of the pixel isolation structure.
- The structure aims to enhance the efficiency of photoelectric conversion in the image sensor.
Potential Applications: - Digital cameras - Surveillance systems - Medical imaging devices
Problems Solved: - Improved photoelectric conversion efficiency - Enhanced image sensor performance
Benefits: - Higher quality images - Increased sensitivity to light - Better overall performance of image sensor devices
Commercial Applications: The technology can be utilized in the development of high-quality digital cameras, surveillance systems, and medical imaging devices, enhancing their performance and image quality.
Questions about Image Sensor Technology: 1. How does the pixel isolation structure improve photoelectric conversion efficiency? 2. What are the potential applications of image sensors with enhanced photoelectric conversion capabilities?
Frequently Updated Research: Researchers are continually exploring ways to further improve the efficiency and performance of image sensors through advancements in pixel isolation structures and photoelectric conversion technologies.
Original Abstract Submitted
an image sensor may include a substrate; a unit pixel region including a photoelectric conversion region; a pixel isolation trench defining the unit pixel region, and extending in a first and a second horizontal direction; and a pixel isolation structure in the pixel isolation trench, wherein the pixel isolation structure includes a dielectric layer on an inner wall of the pixel isolation trench; a first semiconductor pattern on the dielectric layer and including a first dopant; a first insulating layer on a first portion of the first semiconductor pattern overlapping the photoelectric conversion region; a second semiconductor pattern on a second portion of the first semiconductor pattern not overlapping with the photoelectric conversion region, wherein the photoelectric conversion region includes a doped region on an outer wall of the pixel isolation structure, and the doped region includes the first dopant.
