Samsung electronics co., ltd. (20240222399). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222399 titled 'IMAGE SENSOR
The patent application describes an image sensor with specific components and layers arranged in a particular configuration.
- The image sensor includes pixels, a first transistor, a second transistor, interlayer insulating layers, lower and upper electrodes, dielectric layers, and pillars.
- The first transistor and second transistor are spaced apart on the substrate.
- The first lower electrode is connected to the first transistor, and the first upper electrode is on top of the first dielectric layer.
- A pillar penetrates the interlayer insulating layers and is connected to the second transistor.
Potential Applications:
- This technology can be used in digital cameras, smartphones, and other devices requiring image sensors.
- It can also be applied in medical imaging equipment, surveillance cameras, and automotive cameras.
Problems Solved:
- Provides a compact and efficient design for image sensors.
- Enhances the performance and sensitivity of image capturing devices.
Benefits:
- Improved image quality and resolution.
- Cost-effective manufacturing process.
- Increased durability and reliability of image sensors.
Commercial Applications:
- This technology can be utilized by electronics manufacturers to enhance the quality of their products, leading to increased sales and market competitiveness.
Questions about the technology: 1. How does this image sensor design compare to traditional image sensor configurations?
- The design of this image sensor allows for a more compact and efficient layout compared to traditional configurations.
2. What are the potential challenges in implementing this technology in mass production?
- Some potential challenges could include optimizing the manufacturing process to ensure consistent quality and performance across all produced image sensors.
Original Abstract Submitted
an image sensor may include a substrate including pixels, a first transistor and a second transistor disposed on the substrate and spaced apart from each other, a first interlayer insulating layer covering the first transistor and the second transistor, a first lower electrode disposed in the first interlayer insulating layer and connected to an end portion of the first transistor, a first dielectric layer on the first lower electrode, a first upper electrode on the first dielectric layer, a second interlayer insulating layer covering the first upper electrode and the first interlayer insulating layer, and a first pillar provided to penetrate the second and first interlayer insulating layers and connected to an end portion of the second transistor.
