Samsung electronics co., ltd. (20240222309). SEMICONDUCTOR PACKAGE simplified abstract
Contents
SEMICONDUCTOR PACKAGE
Organization Name
Inventor(s)
Okgyeong Park of Suwon-si (KR)
SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222309 titled 'SEMICONDUCTOR PACKAGE
The inventive concept provides a semiconductor package with a substrate, a passivation layer, a semiconductor chip, an underfill material layer, and a dam structure.
- The dam structure surrounds the semiconductor chip and has a lower portion in contact with the passivation layer.
- The lower portion of the dam structure is made of the same material as the passivation layer.
- The upper surface of the dam structure includes two segments at different vertical levels.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor packages for various electronic devices. - It can improve the reliability and performance of semiconductor chips in harsh environments.
Problems Solved: - Enhances the protection and stability of semiconductor chips during operation. - Ensures better adhesion and thermal management in semiconductor packaging.
Benefits: - Increased durability and longevity of semiconductor devices. - Enhanced electrical performance and signal integrity. - Improved resistance to external factors such as moisture and temperature fluctuations.
Commercial Applications: - This technology can be applied in the production of consumer electronics, automotive electronics, and industrial equipment. - It can benefit semiconductor manufacturers, electronics companies, and technology firms looking to enhance their product offerings.
Questions about the technology: 1. How does the dam structure improve the reliability of semiconductor packages? 2. What are the specific advantages of using the same material for the dam structure and passivation layer?
Original Abstract Submitted
the inventive concept provides a semiconductor package including a substrate including a passivation layer, a semiconductor chip mounted on the substrate, an underfill material layer between the semiconductor chip and the substrate, and a dam structure on the substrate and surrounding the semiconductor chip, wherein a lower portion of the dam structure is in contact with the passivation layer and is formed of a material that is the same as a material forming the passivation layer, and an upper surface of the dam structure includes a first segment at a first vertical level and a second segment at a second vertical level, wherein the second vertical level is different from the first vertical level.
