Samsung electronics co., ltd. (20240222275). NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Hyung Joon Kim of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222275 titled 'NON-VOLATILE MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation: The patent application pertains to non-volatile memory devices and methods for fabricating them, as well as electronic systems incorporating these devices. The memory device includes various components such as a substrate, gate electrode layer, electrode pad, channel structure, vertical through contact, and separation insulation pattern.
Key Features and Innovation:
- Non-volatile memory device with a substrate, gate electrode layer, electrode pad, channel structure, vertical through contact, and separation insulation pattern.
- Methods for fabricating non-volatile memory devices.
- Inclusion of various components to enhance the functionality and performance of the memory device.
Potential Applications: The technology can be utilized in various electronic systems requiring non-volatile memory storage, such as smartphones, tablets, laptops, and other portable devices.
Problems Solved: The technology addresses the need for reliable and efficient non-volatile memory storage solutions in electronic devices.
Benefits:
- Enhanced memory storage capabilities.
- Improved performance and reliability of electronic systems.
- Efficient fabrication methods for non-volatile memory devices.
Commercial Applications: The technology has potential commercial applications in the consumer electronics industry, particularly in the development of high-performance electronic devices.
Questions about Non-Volatile Memory Devices: 1. What are the key components of a non-volatile memory device? 2. How does the inclusion of a vertical through contact enhance the functionality of the memory device?
Frequently Updated Research: Stay updated on the latest advancements in non-volatile memory technology to ensure optimal performance and reliability in electronic systems.
Original Abstract Submitted
non-volatile memory devices, methods for fabricating the same, and/or electronic systems including the same may be provided. a non-volatile memory device may include a substrate, a gate electrode layer, an electrode pad, a channel structure, a vertical through contact, and a separation insulation pattern.
