Samsung electronics co., ltd. (20240222267). SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Jongyoon Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222267 titled 'SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
The semiconductor device described in the abstract consists of a stack structure on a substrate with gate electrodes and insulating layers alternately stacked, along with first and second through vias extending through the stack structure.
Key Features and Innovation:
- Stack structure with gate electrodes and insulating layers
- First and second through vias for electrical connections
- Gate pad contacting the first gate electrode
- Vertical pattern with first and second protrusions for overlapping gate electrodes
Potential Applications: This technology can be used in the semiconductor industry for advanced integrated circuits, microprocessors, and other electronic devices requiring precise electrical connections.
Problems Solved: This innovation addresses the need for efficient and reliable electrical connections in complex semiconductor devices with stacked structures.
Benefits:
- Improved electrical connectivity
- Enhanced performance of semiconductor devices
- Increased reliability and durability
Commercial Applications: This technology has significant commercial potential in the semiconductor manufacturing industry, particularly for companies producing high-performance electronic components.
Prior Art: Researchers interested in exploring prior art related to this technology can start by looking into patents and research papers on semiconductor device structures and electrical connections in integrated circuits.
Frequently Updated Research: Ongoing research in the field of semiconductor devices focuses on improving the efficiency and performance of integrated circuits through innovative design and manufacturing techniques.
Questions about the technology: 1. How does this semiconductor device improve the overall performance of electronic devices? 2. What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
Original Abstract Submitted
a semiconductor device comprising: a stack structure on a substrate including gate electrodes and insulating layers alternately stacked; a first through via extending through the stack structure; and a second through via spaced apart from the first through via, wherein the second through via extends through the stack structure, wherein the second through via is electrically connected to a first gate electrode that is farthest one among the gate electrodes from the substrate in the vertical direction, wherein a gate pad is on and contacts the first gate electrode, and the first through via includes: a vertical pattern; first and second protrusions that protrude from the vertical pattern, wherein the first protrusion overlaps a portion of the first gate electrode in the horizontal direction; and the second protrusion overlaps a second gate electrode in the horizontal direction, wherein the second gate electrode is spaced apart from the second through via.
