Samsung electronics co., ltd. (20240221834). VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract
Contents
VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
Hyungyung Kim of Suwon-si (KR)
Seungdam Hyun of Suwon-si (KR)
Seungyeul Yang of Suwon-si (KR)
Seokhoon Choi of Suwon-si (KR)
VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240221834 titled 'VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
The abstract describes a vertical non-volatile memory device with multiple layers and gate electrodes for improved performance.
- The device includes a pillar, channel layer, charge tunneling layer, charge trap layer with amorphous oxynitride, charge blocking layer, separation layers, and gate electrodes.
- These components are arranged along the side surface of the device to enhance its functionality.
- The use of amorphous oxynitride in the charge trap layer is a key innovation in this technology.
- The vertical structure of the memory device allows for efficient data storage and retrieval.
- The alternating arrangement of the separation layers and gate electrodes contributes to the device's overall performance.
Potential Applications: - This technology can be used in various electronic devices requiring non-volatile memory storage. - It can be applied in smartphones, tablets, laptops, and other portable devices for data storage purposes.
Problems Solved: - The vertical non-volatile memory device addresses the need for high-density, reliable data storage solutions. - It offers improved performance and efficiency compared to traditional memory devices.
Benefits: - Enhanced data storage capacity and speed. - Increased reliability and durability of the memory device. - Improved overall performance of electronic devices.
Commercial Applications: Title: Vertical Non-Volatile Memory Device for Enhanced Data Storage This technology has potential commercial applications in the consumer electronics market, specifically in smartphones, tablets, and laptops. The improved performance and efficiency of the memory device can attract manufacturers looking to enhance the storage capabilities of their products.
Questions about Vertical Non-Volatile Memory Devices: 1. How does the use of amorphous oxynitride in the charge trap layer benefit the performance of the memory device? - The use of amorphous oxynitride in the charge trap layer helps improve the charge retention and endurance of the memory device, leading to enhanced reliability and durability. 2. What are the key advantages of the vertical structure of the memory device compared to traditional memory devices? - The vertical structure allows for higher density data storage, improved performance, and more efficient data retrieval, making it a preferred choice for modern electronic devices.
Original Abstract Submitted
a vertical non-volatile memory device and an electronic apparatus including the vertical non-volatile memory device are provided. the vertical non-volatile memory device includes a pillar, a channel layer surrounding a side surface of the pillar, a charge tunneling layer surrounding a side surface of the channel layer, a charge trap layer surrounding a side surface of the charge tunneling layer and including an amorphous oxynitride, a charge blocking layer surrounding a side surface of the charge trap layer, and a plurality of separation layers and a plurality of gate electrodes surrounding a side surface of the charge blocking layer and alternately arranged along the side surface of the charge blocking layer.
