Samsung electronics co., ltd. (20240221832). NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seyun Kim of Suwon-si (KR)

Kyunghun Kim of Suwon-si (KR)

Sunho Kim of Suwon-si (KR)

Hyungyung Kim of Suwon-si (KR)

Seungyeul Yang of Suwon-si (KR)

Gukhyon Yon of Suwon-si (KR)

Minhyun Lee of Suwon-si (KR)

Joonsuk Lee of Suwon-si (KR)

Seokhoon Choi of Suwon-si (KR)

Hoseok Heo of Suwon-si (KR)

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240221832 titled 'NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

The abstract describes a nonvolatile memory device that includes a channel layer, a plurality of gate electrodes, a plurality of insulating layers, a charge trap layer, and a charge tunneling layer.

• The nonvolatile memory device consists of a channel layer, gate electrodes, insulating layers, a charge trap layer, and a charge tunneling layer.
• The gate electrodes and insulating layers are alternately arranged and spaced apart from the channel layer.
• The charge trap layer is positioned between the channel layer and a gate electrode.
• The charge tunneling layer is located between the channel layer and the charge trap layer.

Potential Applications: This technology can be used in various electronic devices such as smartphones, tablets, laptops, and solid-state drives.

Problems Solved: This technology addresses the need for reliable and high-performance nonvolatile memory storage in electronic devices.

Benefits: The nonvolatile memory device offers fast data access, low power consumption, and high data retention capabilities.

Commercial Applications: The technology can be applied in the consumer electronics industry to enhance the performance and storage capacity of electronic devices.

Prior Art: Researchers can explore prior patents related to nonvolatile memory devices, charge trap layers, and charge tunneling layers to understand the evolution of this technology.

Frequently Updated Research: Stay updated on advancements in nonvolatile memory technology, materials science, and semiconductor manufacturing processes to enhance the performance of these memory devices.

Questions about Nonvolatile Memory Devices: 1. What are the key advantages of using a charge trap layer in nonvolatile memory devices?

  - The charge trap layer helps improve data retention and endurance in nonvolatile memory devices.

2. How does the arrangement of gate electrodes and insulating layers impact the performance of the nonvolatile memory device?

  - The alternating arrangement of gate electrodes and insulating layers helps control the flow of charge in the memory device, enhancing its efficiency and reliability.

Original Abstract Submitted

provided is a nonvolatile memory device. the nonvolatile memory device includes: a channel layer; a plurality of gate electrodes and a plurality of insulating layers being spaced apart from the channel layer and being alternately arranged; a charge trap layer between the channel layer and a gate electrode, and a charge tunneling layer between the channel layer and the charge trap layer.