Samsung electronics co., ltd. (20240219845). OVERLAY MEASUREMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

OVERLAY MEASUREMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

SEUNGHAK Park of Suwon-si (KR)

Jinsun Kim of Suwon-si (KR)

Jeongjin Lee of Suwon-si (KR)

OVERLAY MEASUREMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240219845 titled 'OVERLAY MEASUREMENT METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

The abstract of this patent application describes a method for measuring overlay in a device structure by combining critical dimension information and tilt information to calculate a compensation overlay.

  • Device structure includes a substrate, lower stack, and upper stack
  • First overlay measures critical dimension information
  • Second overlay measures tilt information
  • Compensation overlay calculated by combining first and second overlays
  • Structures penetrate portions of lower and upper stacks in vertical direction

Potential Applications: - Semiconductor manufacturing - Nanotechnology - Metrology industry

Problems Solved: - Accurate measurement of overlay in complex device structures - Improving alignment and precision in manufacturing processes

Benefits: - Enhanced quality control in device fabrication - Increased efficiency in production processes - Reduction of errors and waste in manufacturing

Commercial Applications: Title: Advanced Overlay Measurement Method for Semiconductor Manufacturing This technology can be used in the semiconductor industry to improve the accuracy and efficiency of overlay measurements in device structures, leading to enhanced quality control and cost savings in production processes.

Questions about Overlay Measurement Method: 1. How does this method improve the accuracy of overlay measurements in device structures? This method combines critical dimension and tilt information to calculate a compensation overlay, resulting in more precise alignment and measurement.

2. What are the potential applications of this technology beyond semiconductor manufacturing? This technology can also be applied in fields such as nanotechnology and metrology for accurate measurement and alignment processes.


Original Abstract Submitted

an overlay measurement method includes providing a device structure including a substrate, a lower stack on the substrate and an upper stack on the lower stack, measuring a first overlay including critical dimension (cd) information of the device structure, measuring a second overlay including tilt information of the device structure, and calculating a compensation overlay by combining the first overlay and the second overlay, wherein the device structure has a first structure penetrating a portion of at least one of the lower stack or the upper stack in a vertical direction perpendicular to an upper surface of the substrate, and a second structure penetrating a portion of the lower stack and a portion of the upper stack in the vertical direction.