Samsung electronics co., ltd. (20240215253). SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Seonghun Jeong of Hwaseong-si (KR)
Byoungil Lee of Hwaseong-si (KR)
Joonhee Lee of Seongnam-si (KR)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240215253 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
The semiconductor device described in the patent application consists of a peripheral circuit structure with circuit elements on a first substrate, and a memory cell structure with a second substrate, horizontal conductive layers, gate electrodes, channel structures, and separation regions.
- The memory cell structure is electrically connected to the peripheral circuit structure through a through-wiring region, which includes a through-contact plug.
- The separation regions in the memory cell structure include first separation regions adjacent to the through-contact plug, penetrating through the horizontal conductive layers, and spaced apart from the first horizontal conductive layer.
Key Features and Innovation:
- Integration of a memory cell structure and a peripheral circuit structure in a semiconductor device.
- Use of through-wiring region to connect the memory cell structure and the peripheral circuit structure.
- Design of separation regions to ensure proper spacing and isolation within the memory cell structure.
Potential Applications:
- Memory devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved:
- Efficient integration of memory and peripheral circuits in a semiconductor device
- Ensuring proper electrical connections and isolation within the device
Benefits:
- Improved performance and functionality of semiconductor devices
- Enhanced reliability and efficiency in memory operations
Commercial Applications:
- Memory chips for electronic devices
- Microprocessors for computers
- Semiconductor components for automotive applications
Questions about the technology: 1. How does the through-wiring region improve the functionality of the semiconductor device? 2. What are the advantages of having separation regions in the memory cell structure?
Frequently Updated Research: Research on advanced semiconductor manufacturing techniques Studies on memory cell integration in semiconductor devices
Original Abstract Submitted
a semiconductor device includes a peripheral circuit structure including a first substrate and circuit elements on the first substrate; and a memory cell structure including a second substrate on the first substrate, a first horizontal conductive layer on the second substrate, a second horizontal conductive layer on the first horizontal conductive layer, gate electrodes spaced apart from each other and stacked on the second horizontal conductive layer, channel structures penetrating through the gate electrodes, and separation regions penetrating the gate electrodes, extending, and spaced apart from each other. the semiconductor device has a through-wiring region including a through-contact plug electrically connecting the memory cell structure and the peripheral circuit structure, the separation regions include first separation regions adjacent to the through-contact plug, and the first separation regions penetrate through the second horizontal conductive layer and are spaced apart from the first horizontal conductive layer.
