Samsung electronics co., ltd. (20240215252). NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract
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NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
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NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240215252 titled 'NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
The abstract describes a nonvolatile memory device with a peripheral circuit structure and a cell array structure bonded to it. The cell array structure includes various layers and structures for memory storage and access.
- Common source line layer
- Buffer insulating layer
- Contact stop layers
- Cell stack with gate electrodes and insulating layers
- Cell channel structures
- Contact structures
- Second insulating structure
Key Features and Innovation: - Integration of various layers and structures in the cell array for efficient memory storage and access. - Use of contact stop layers to improve performance and reliability. - Design of cell stack with gate electrodes and insulating layers for data storage.
Potential Applications: - Nonvolatile memory devices in electronic devices such as smartphones, tablets, and computers. - Storage solutions in data centers and servers.
Problems Solved: - Improved memory performance and reliability. - Efficient data storage and access.
Benefits: - Faster data access speeds. - Enhanced memory reliability. - Increased data storage capacity.
Commercial Applications: Title: Nonvolatile Memory Device for High-Performance Data Storage This technology can be used in various electronic devices and data storage systems, improving memory performance and reliability. It can cater to the growing demand for high-speed data access and storage solutions in the market.
Prior Art: Readers can explore prior research on nonvolatile memory devices, cell array structures, and memory storage technologies to understand the evolution of this innovation.
Frequently Updated Research: Researchers are constantly exploring new materials and designs to enhance nonvolatile memory devices' performance and efficiency.
Questions about Nonvolatile Memory Devices: 1. How does the integration of contact stop layers improve memory performance? Contact stop layers help prevent interference between different memory cells, enhancing overall device reliability and performance.
2. What are the potential challenges in scaling up the production of nonvolatile memory devices? Scaling up production may face challenges related to manufacturing consistency, cost-effectiveness, and quality control.
Original Abstract Submitted
a nonvolatile memory device includes a peripheral circuit structure including a peripheral circuit and a first insulating structure covering the peripheral circuit and a cell array structure bonded to the peripheral circuit structure and including a cell region and a connection region, wherein the cell array structure includes a common source line layer, a buffer insulating layer on the common source line layer, a plurality of contact stop layers buried in the buffer insulating layer, a cell stack which includes a plurality of gate electrodes and a plurality of insulating layers alternately stacked on the buffer insulating layer, a plurality of cell channel structures extending to the common source line layer by passing through the cell stack, a plurality of contact structures each connected to one or more of the plurality of gate electrodes, and a second insulating structure covering the cell stack.
