Samsung electronics co., ltd. (20240215250). MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE simplified abstract

MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Seyun Kim of Suwon-si (KR)

Jooheon Kang of Hwaseong-si (KR)

Yumin Kim of Suwon-si (KR)

Garam Park of Suwon-si (KR)

Hyunjae Song of Suwon-si (KR)

Dongho Ahn of Hwaseong-si (KR)

Seungyeul Yang of Suwon-si (KR)

Myunghun Woo of Hwaseong-si (KR)

Jinwoo Lee of Hwaseong-si (KR)

Seungdam Hyun of Suwon-si (KR)

MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240215250 titled 'MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE

The abstract of the patent application describes a memory device with a vertical stack structure that includes a gate electrode, a resistance change layer, a channel, an island structure, and a gate insulating layer.

• The memory device features a vertical stack structure.
• It includes a gate electrode and a resistance change layer.
• There is a channel between the gate electrode and the resistance change layer.
• An island structure is present between the resistance change layer and the channel.
• The gate insulating layer is located between the gate electrode and the channel.

Potential Applications: - This technology could be used in non-volatile memory devices. - It may find applications in data storage systems. - The memory device could be utilized in electronic devices such as smartphones and computers.

Problems Solved: - Provides a more efficient and reliable memory storage solution. - Enhances the performance of data storage systems. - Offers a compact and scalable memory device design.

Benefits: - Improved data storage capabilities. - Enhanced reliability and durability. - Increased efficiency in memory operations.

Commercial Applications: Title: Innovative Memory Device for Enhanced Data Storage This technology could be commercialized in the semiconductor industry for manufacturing memory devices with improved performance and reliability. It has the potential to revolutionize data storage systems in various electronic devices, leading to increased market competitiveness.

Questions about the technology: 1. How does the island structure contribute to the functionality of the memory device? 2. What advantages does the vertical stack structure offer compared to traditional memory device designs?

Original Abstract Submitted

a memory device including the vertical stack structure includes a gate electrode, a resistance change layer, a channel between the gate electrode and the resistance change layer, and an island structure between the resistance change layer and the channel and in contact with the resistance change layer and the channel, and a gate insulating layer between the gate electrode and the channel.