Samsung electronics co., ltd. (20240215249). VERTICAL NAND FLASH MEMORY DEVICE simplified abstract

VERTICAL NAND FLASH MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Kyunghun Kim of Suwon-si (KR)

Sunho Kim of Suwon-si (KR)

Seyun Kim of Suwon-si (KR)

Hyungyung Kim of Suwon-si (KR)

Seungyeul Yang of Suwon-si (KR)

Gukhyon Yon of Hwaseong-si (KR)

Minhyun Lee of Suwon-si (KR)

Seokhoon Choi of Suwon-si (KR)

Hoseok Heo of Suwon-si (KR)

VERTICAL NAND FLASH MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240215249 titled 'VERTICAL NAND FLASH MEMORY DEVICE

The abstract describes a vertical NAND flash memory device with multiple cell arrays, each containing a channel layer, a charge trap layer with silicon oxynitride including a metal, and several gate electrodes.

• The vertical NAND flash memory device consists of multiple cell arrays.
• Each cell array includes a channel layer, a charge trap layer made of silicon oxynitride with a metal component, and multiple gate electrodes.
• The metal component in the charge trap layer can be either Ga or In.
• This design enhances the performance and efficiency of the flash memory device.

Potential Applications: - Data storage in electronic devices - Solid-state drives (SSDs) - Mobile phones and tablets

Problems Solved: - Improved data storage capacity - Enhanced data transfer speeds - Increased reliability and durability of memory devices

Benefits: - Higher storage capacity - Faster data transfer rates - Enhanced reliability and longevity of memory devices

Commercial Applications: Title: Advanced Vertical NAND Flash Memory for High-Performance Data Storage This technology can be utilized in various commercial applications such as: - Consumer electronics - Data centers - Automotive industry for infotainment systems

Questions about Vertical NAND Flash Memory: 1. How does the inclusion of a metal component in the charge trap layer improve the performance of the flash memory device? 2. What are the specific advantages of using Ga or In in the charge trap layer of the memory device?

Frequently Updated Research: Stay updated on the latest advancements in vertical NAND flash memory technology to ensure optimal performance and efficiency in data storage solutions.

Original Abstract Submitted

a vertical nand flash memory device may include a plurality of cell arrays. each of the plurality of cell arrays may include a channel layer, a charge trap layer on the channel layer, and a plurality of gate electrodes on the charge trap layer. the charge trap layer may include silicon oxynitride comprising a metal. the metal may include at least one of ga or in.