Samsung electronics co., ltd. (20240215248). SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
HYUN-MOOK Choi of Suwon-si (KR)
CHAE LYOUNG Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240215248 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The semiconductor device described in the abstract consists of gate layers and lower insulating layers stacked alternately on a substrate, with a channel structure passing through them in a vertical direction. A string select gate layer is placed on the channel structure, along with a string select channel structure passing through the string select gate layer. A contact pad connects the channel structure to the string select channel structure, with different widths on the upper and lower surfaces of the pad.
- Gate layers and lower insulating layers are stacked alternately on a substrate.
- Channel structure passes through the layers in a vertical direction.
- String select gate layer and string select channel structure are included.
- Contact pad connects the channel structure to the string select channel structure.
- Different widths on the upper and lower surfaces of the contact pad.
- Potential Applications:
This technology could be used in the development of advanced semiconductor devices for various electronic applications, such as in memory storage, processors, and communication devices.
- Problems Solved:
This innovation addresses the need for efficient and compact semiconductor devices with improved connectivity and performance.
- Benefits:
The benefits of this technology include enhanced functionality, increased efficiency, and improved overall performance of semiconductor devices.
- Commercial Applications:
This technology has potential commercial applications in the semiconductor industry, particularly in the development of high-performance electronic devices for consumer electronics, telecommunications, and computing.
- Prior Art:
Prior art related to this technology may include research on semiconductor device structures, vertical channel structures, and contact pad designs in the field of semiconductor engineering.
- Frequently Updated Research:
Researchers are constantly exploring new materials and designs to enhance the performance and efficiency of semiconductor devices, which may lead to further advancements in this area.
- Questions about Semiconductor Device Technology:
1. What are the key features of the semiconductor device described in the abstract? 2. How does the contact pad in this technology improve connectivity and performance?
Original Abstract Submitted
a semiconductor device includes gate layers and lower insulating layers that are alternately stacked on an upper surface of a substrate, a channel structure passing through the gate layers and the lower insulating layers and extending in a vertical direction, a string select gate layer disposed on the channel structure, a string select channel structure passing through the string select gate layer and extending in the vertical direction, and a contact pad disposed in a space between the channel structure and the string select channel structure and connecting the channel structure to the string select channel structure. a lower surface of the contact pad contacts the channel structure and an upper surface of the contact pad contacts the string select channel structure. a first width of the lower surface of the contact pad is greater than a second width of a central portion of the contact pad. a third width of the upper surface of the contact pad is greater than the second width of the central portion of the contact pad.
