Samsung electronics co., ltd. (20240215245). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Ji Young Kim of Hwaseong-si (KR)
Woo Sung Yang of Gwangmyeong-si (KR)
Sung-Min Hwang of Hwaseong-si (KR)
Suk Kang Sung of Seongnam-si (KR)
Joon-Sung Lim of Seongnam-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240215245 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of multiple stacked structures, supporter layers, cut structures, and cut patterns to enhance its functionality and performance.
- The first stacked structure includes two stacks, while the second stacked structure includes a third and fourth stack separated by a block cut structure.
- Supporter layers are placed on the stacked structures to provide stability and support.
- Cut patterns with connections on the block cut structure help in connecting the supporter layers to the respective stacks, ensuring proper functioning of the device.
Potential Applications: This technology can be used in various electronic devices requiring high-performance semiconductor memory, such as smartphones, tablets, laptops, and servers.
Problems Solved: The semiconductor memory device addresses the need for efficient data storage and retrieval in electronic devices, improving overall performance and speed.
Benefits: The device offers increased storage capacity, faster data access, and enhanced reliability, leading to improved user experience and device efficiency.
Commercial Applications: This technology has significant commercial potential in the consumer electronics market, data centers, and other industries requiring high-speed and reliable memory solutions.
Prior Art: Researchers can explore prior patents related to semiconductor memory devices, stacked structures, and supporter layers to understand the evolution of this technology.
Frequently Updated Research: Stay updated on advancements in semiconductor memory technology, stacked structures, and supporter layers to leverage the latest innovations in this field.
Questions about Semiconductor Memory Devices: 1. How does the design of supporter layers contribute to the performance of semiconductor memory devices? Supporter layers play a crucial role in providing stability and support to the stacked structures, ensuring efficient functioning of the device.
2. What are the key differences between the first and second stacked structures in semiconductor memory devices? The first stacked structure consists of two stacks, while the second stacked structure includes a third and fourth stack separated by a block cut structure, enhancing the device's performance and functionality.
Original Abstract Submitted
a semiconductor memory device includes a first stacked structure, a first supporter layer, a second stacked structure, a block cut structure, and a second supporter layer on the second stacked structure and separated by a second cut pattern. the first stacked structure includes a first and second stack, the second stacked structure includes a third stack separated by the block cut structure and a fourth stack, the first supporter layer is on the first stack and the second stack, the second supporter layer is on the third stack and the fourth stack, the first cut pattern includes a first connection on the block cut structure and connecting the first supporter layer and the second stack, and the second cut pattern of the second supporter layer includes a second connection on the block cut structure and connecting the second supporter layer placed on the third stack and the fourth stack.
