Samsung electronics co., ltd. (20240214703). IMAGE SENSOR simplified abstract
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IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240214703 titled 'IMAGE SENSOR
The image sensor described in the patent application consists of multiple pixels, each containing two photodiodes, transfer transistors, reset transistors, a switch transistor, and a driving transistor.
- Each pixel has a first and second photodiode for capturing light.
- The first and second transfer transistors are connected to floating diffusion nodes to transfer charge.
- Reset transistors are used to reset the floating diffusion nodes with specific power supply voltages.
- A switch transistor connects the second floating diffusion node to the first floating diffusion node.
- A driving transistor outputs an output voltage based on the voltage of the first floating diffusion node.
Potential Applications: - Digital cameras - Smartphone cameras - Surveillance cameras - Medical imaging devices
Problems Solved: - Improved image quality - Enhanced low-light performance - Reduced noise in captured images
Benefits: - Higher resolution images - Better overall image quality - Improved performance in various lighting conditions
Commercial Applications: Title: "Advanced Image Sensor Technology for Enhanced Photography" This technology can be utilized in the development of high-quality digital cameras for professional photographers, smartphone manufacturers looking to enhance their camera capabilities, and companies producing surveillance systems for improved security monitoring.
Questions about the technology: 1. How does this image sensor technology compare to traditional sensors in terms of performance? 2. What potential advancements can be expected in the future for this type of image sensor technology?
Original Abstract Submitted
an image sensor includes a plurality of pixels, each pixel of the plurality of pixels includes, a first photodiode, a second photodiode, a first transfer transistor connected to a first floating diffusion node, a second transfer transistor connected to a second floating diffusion node, a first reset transistor configured to reset the first floating diffusion node with a first reset power supply voltage, a second reset transistor configured to reset the second floating diffusion node with a second reset power supply voltage, a switch transistor connecting the second floating diffusion node to the first floating diffusion node, and a first driving transistor configured to output an output voltage according to a voltage of the first floating diffusion node.