Samsung electronics co., ltd. (20240213349). ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE
Organization Name
Inventor(s)
Hyangsook Lee of Suwon-si (KR)
ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213349 titled 'ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE
The abstract describes an electronic device and apparatus with a ferroelectric layer containing hafnium and a second component, which is twice as thick as the first oxide layer.
- The electronic device includes a conductive material layer and a ferroelectric layer with specific components.
- The ferroelectric layer has a unique composition, including hafnium and a second component.
- The thickness of the second oxide layer is at least twice that of the first oxide layer.
Potential Applications: - Memory devices - Sensors - Actuators
Problems Solved: - Improved data retention in memory devices - Enhanced performance in sensors and actuators
Benefits: - Increased efficiency and reliability in electronic devices - Better overall performance in various applications
Commercial Applications: Title: Advanced Ferroelectric Technology for Enhanced Electronic Devices This technology can be utilized in the development of high-performance memory devices, sensors, and actuators, catering to industries such as consumer electronics, automotive, and healthcare.
Questions about Ferroelectric Technology: 1. How does the composition of the ferroelectric layer impact the performance of electronic devices? The composition of the ferroelectric layer, including hafnium and a second component, plays a crucial role in enhancing the efficiency and reliability of electronic devices by improving data retention and overall performance.
2. What are the potential challenges in implementing this advanced ferroelectric technology in commercial electronic devices? The implementation of this technology may face challenges related to scalability, manufacturing processes, and cost-effectiveness, which need to be addressed for widespread adoption in commercial applications.
Original Abstract Submitted
an electronic device and an electronic apparatus including the electronic device are provided. the electronic device includes a conductive material layer, and a ferroelectric layer covering the conductive material layer. the ferroelectric layer includes a first oxide layer including a first component, and a second oxide layer including hafnium and a second component and having a thickness that is twice or more than a thickness of the first oxide layer.
