Samsung electronics co., ltd. (20240213342). SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213342 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
The semiconductor device described in the patent application consists of a substrate with a gate trench, a gate insulating film, a titanium nitride (TiN) lower gate electrode film, a polysilicon upper gate electrode film, and a gate capping film.
- The TiN lower gate electrode film has a top surface, a first side surface, and a second side surface connected to the gate insulating film.
- The center portion of the top surface of the TiN lower gate electrode film overlaps the center portion of the polysilicon upper gate electrode film.
- The gate capping film is on top of the polysilicon upper gate electrode film.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and reliability of integrated circuits in electronic devices.
Problems Solved: - Enhances the efficiency and functionality of semiconductor devices. - Provides better control and stability in electronic circuits.
Benefits: - Improved performance and reliability of electronic devices. - Enhanced efficiency and functionality of semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Electronic Applications This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also be applied in the automotive industry for advanced driver assistance systems and in the aerospace sector for avionics.
Questions about the technology: 1. How does the overlap of the TiN lower gate electrode film and the polysilicon upper gate electrode film contribute to the performance of the semiconductor device? 2. What are the specific advantages of using a gate capping film in this semiconductor device design?
Frequently Updated Research: Ongoing research in semiconductor materials and device fabrication techniques may lead to further advancements in the field, potentially improving the efficiency and performance of future electronic devices.
Original Abstract Submitted
a semiconductor device includes a substrate, a gate trench in the substrate, a gate insulating film in the gate trench, a titanium nitride (tin)-lower gate electrode film on the gate insulating film, the titanium nitride (tin)-lower gate electrode film including a top surface, a first side surface, and a second side surface opposite the first side surface, a polysilicon-upper gate electrode film on the titanium nitride (tin)-lower gate electrode film, and a gate capping film on the polysilicon-upper gate electrode film. a center portion of the top surface of the titanium nitride (tin)-lower gate electrode film overlaps a center portion of the polysilicon-upper gate electrode film in a direction that is perpendicular to a top surface of the substrate, and each of the first side surface and the second side surface of the titanium nitride (tin)-lower gate electrode film is connected to the gate insulating film.
