Samsung electronics co., ltd. (20240213283). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213283 titled 'IMAGE SENSOR
The patent application describes an image sensor with a pixel isolation structure that defines pixel regions and photoelectric conversion regions, along with a separation structure between the photoelectric conversion regions.
- The pixel isolation structure includes first and second pixel isolation portions that are spaced apart and extend in different directions.
- The separation structure is at least partly at the same level as the photoelectric conversion regions.
- The separation structure is spaced apart from the pixel isolation structure in multiple directions.
Potential Applications: - This technology can be used in digital cameras, smartphones, and other devices with image sensors. - It can improve the performance and image quality of electronic devices that rely on image sensors.
Problems Solved: - The technology helps in reducing crosstalk between adjacent pixels. - It enhances the efficiency of photoelectric conversion in image sensors.
Benefits: - Improved image quality and resolution. - Enhanced performance of electronic devices with image sensors.
Commercial Applications: - This technology can be utilized in the consumer electronics industry for manufacturing high-quality cameras and smartphones with advanced image sensor capabilities.
Questions about the technology: 1. How does the separation structure contribute to reducing crosstalk between pixels?
The separation structure helps in physically isolating the photoelectric conversion regions, thereby minimizing interference between adjacent pixels.
2. What are the key advantages of having the pixel isolation structure with first and second pixel isolation portions?
The first and second pixel isolation portions allow for efficient spatial separation of pixels, reducing signal interference and improving overall image sensor performance.
Original Abstract Submitted
an image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. the pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. the separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.
