Samsung electronics co., ltd. (20240213199). SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME simplified abstract

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SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Sungwoo Park of Suwon-si (KR)

Yongjae Kim of Suwon-si (KR)

Heonwoo Kim of Suwon-si (KR)

Seung-Kwan Ryu of Suwon-si (KR)

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213199 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

The present disclosure introduces semiconductor packages and methods for their fabrication. In some embodiments, a semiconductor package consists of a substrate with first and second regions, a first pad on the first region, a second pad on the second region, a first dielectric layer on the first region with a first opening exposing the first pad, a second dielectric layer on the second region with a second opening exposing the second pad, a first bump structure on the first pad and in the first opening, and a second bump structure on the second pad and in the second opening. The first dielectric layer is thicker than the second dielectric layer, and the distance between the substrate and the uppermost end of the first bump structure is greater than the distance between the substrate and the uppermost end of the second bump structure.

  • The semiconductor package includes a substrate with distinct regions and pads, dielectric layers with openings exposing the pads, and bump structures on the pads.
  • The first dielectric layer is thicker than the second dielectric layer, providing different levels of insulation.
  • The distance between the substrate and the top of the bump structures varies, ensuring proper connections within the package.
  • This innovation enhances the performance and reliability of semiconductor packages by optimizing the design and structure.
  • The method of fabrication involves precise layering and placement of components to achieve the desired configuration.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design

Problems Solved: - Improved insulation and connectivity in semiconductor packages - Enhanced performance and reliability of electronic devices

Benefits: - Higher quality and efficiency in semiconductor packaging - Better signal transmission and overall device functionality

Commercial Applications: Title: Advanced Semiconductor Packaging Technology for Enhanced Device Performance This technology can be utilized in various electronic devices, such as smartphones, computers, and automotive electronics, to improve their performance and reliability. The market implications include increased demand for high-quality semiconductor packages in the electronics industry.

Questions about Semiconductor Packaging Technology: 1. How does the thickness of the dielectric layers impact the performance of the semiconductor package? - The thickness of the dielectric layers affects the insulation and signal transmission within the package, influencing its overall performance. 2. What are the key advantages of using different bump structure heights in semiconductor packaging? - Varying the height of bump structures allows for optimized connections and signal flow, enhancing the functionality of the semiconductor package.


Original Abstract Submitted

the present disclosure provides semiconductor packages and methods of fabricating the same. in some embodiments, a semiconductor package includes a substrate including first and second regions, a first pad on the first region, a second pad on the second region, a first dielectric layer on the first region and including a first opening exposing the first pad, a second dielectric layer on the second region and including a second opening exposing the second pad, a first bump structure on the first pad and in the first opening, and a second bump structure on the second pad and in the second opening. a thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. a distance between the substrate and an uppermost end of the first bump structure is longer than a distance between the substrate and an uppermost end of the second bump structure.