Samsung electronics co., ltd. (20240213017). METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract

METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Younghun Sung of Suwon-si (KR)

Sunhye Hwang of Suwon-si (KR)

Sangho Rha of Suwon-si (KR)

Seungjae Sim of Suwon-si (KR)

Younseok Choi of Suwon-si (KR)

Byungkeun Hwang of Suwon-si (KR)

Youn Joung Cho of Suwon-si (KR)

METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213017 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

The abstract describes a method of manufacturing an integrated circuit device by forming a doped silicon oxide film on a substrate, creating a vertical hole in the film, and forming a vertical structure in the hole.

• The method involves supplying a silicon precursor, an oxidant, and at least two dopant sources with different dopant elements to create the doped silicon oxide film.
• Dry-etching is used to form the vertical hole in the doped silicon oxide film.
• The silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, with a si—h functional group and a c1-c10 oxy group or a c1-c10 organoamino group.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Nanotechnology research

Problems Solved: - Enhancing the performance of integrated circuit devices - Improving the efficiency of manufacturing processes

Benefits: - Increased functionality of integrated circuits - Enhanced precision in device fabrication - Potential cost savings in production

Commercial Applications: Title: Advanced Semiconductor Manufacturing Method This technology could be utilized in the production of high-performance electronic devices, leading to improved product quality and competitiveness in the market.

Prior Art: Researchers can explore prior studies on doped silicon oxide films, vertical hole formation, and semiconductor manufacturing processes to gain insights into related technologies.

Frequently Updated Research: Researchers are continually investigating new dopant sources and silicon precursors to enhance the properties of integrated circuit devices.

Questions about Integrated Circuit Device Manufacturing: 1. How does the use of multiple dopant elements in the doped silicon oxide film impact the performance of the integrated circuit device? 2. What are the potential challenges in scaling up this manufacturing method for mass production?

Original Abstract Submitted

a method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a si—h functional group, and a c1-c10 oxy group or a c1-c10 organoamino group.