Samsung electronics co., ltd. (20240212980). PLASMA PROCESS APPARATUS simplified abstract
Contents
PLASMA PROCESS APPARATUS
Organization Name
Inventor(s)
Sangwook Park of Suwon-si (KR)
Kyoungwhan Oh of Suwon-si (KR)
PLASMA PROCESS APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240212980 titled 'PLASMA PROCESS APPARATUS
The patent application describes a plasma process apparatus that includes a chamber with a plasma processing space, a substrate stage with a seating surface, a target with deposition particles, a gas supplier, and a plasma generator.
- The apparatus utilizes a rotating permanent magnet on the target to distribute plasma through a magnetic field.
- A coil assembly on the chamber wall generates magnetic field vectors to guide the plasma using inclined side coils.
- The combination of the magnetic field vectors from the coil assembly directs the plasma for efficient deposition of particles on the substrate.
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification processes
Problems Solved: - Enhanced control and uniformity of plasma distribution - Improved deposition efficiency on substrates
Benefits: - Increased deposition accuracy - Higher quality thin films - Reduced process time and cost
Commercial Applications: Title: Advanced Plasma Processing Apparatus for Semiconductor Manufacturing This technology can revolutionize the semiconductor industry by improving thin film deposition processes, leading to higher quality and more efficient production.
Questions about Plasma Process Apparatus: 1. How does the rotating permanent magnet on the target improve plasma distribution?
- The rotating permanent magnet helps distribute plasma evenly on the target surface, ensuring uniform deposition of particles on the substrate.
2. What role does the coil assembly play in guiding the plasma?
- The coil assembly generates magnetic field vectors that work in conjunction with the rotating permanent magnet to direct the plasma flow for precise deposition.
Original Abstract Submitted
provided a plasma process apparatus including a chamber including a plasma processing space, a substrate stage included in the chamber, the substrate stage including a seating surface, a target including deposition particles to be deposited on the substrate, a gas supplier configured to supply gas into the chamber, a plasma generator configured to generate plasma from the gas, the plasma generator configured to deposit the deposition particles on the substrate through the plasma, at least one permanent magnet on the target being rotatable and configured to distribute the plasma on the target through a magnetic field, and a coil assembly on an outer wall of the chamber and assembly including first through third side coils inclined and being configured to generate first through third vectors, respectively, and the coil assembly being configured to generate a magnetic field vector guiding the plasma through a combination of the first through third vectors.
