Samsung electronics co., ltd. (20240212756). VERTICAL TYPE MEMORY DEVICE simplified abstract
Contents
VERTICAL TYPE MEMORY DEVICE
Organization Name
Inventor(s)
Hyunmook Choi of Suwon-si (KR)
VERTICAL TYPE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240212756 titled 'VERTICAL TYPE MEMORY DEVICE
The abstract of the patent application describes a vertical type memory device with a first pillar structure in a channel hole inside a word line mold and a second pillar structure in a string select line hole overlapping the channel hole inside a string select line mold.
- The first pillar structure includes a first gate insulating layer, a cell channel layer, a variable resistance layer, a first filling insulating layer, and a connection pad.
- The second pillar structure includes a second gate insulating layer, a select channel layer, and a second filling insulating layer.
Potential Applications: - This technology can be used in memory devices for various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems and servers for efficient data processing.
Problems Solved: - Provides a compact and efficient memory device design. - Enhances the performance and reliability of memory devices.
Benefits: - Improved memory device performance. - Higher data storage capacity. - Enhanced data processing speed.
Commercial Applications: - The technology can be utilized by semiconductor manufacturers to produce advanced memory devices for consumer electronics and data storage systems.
Questions about the technology: 1. How does this vertical type memory device compare to traditional memory devices in terms of performance and efficiency? 2. What are the potential challenges in implementing this technology on a large scale in commercial products?
Frequently Updated Research: - Stay updated on advancements in vertical memory device technology by following research publications in the field of semiconductor devices and memory storage technologies.
Original Abstract Submitted
a vertical type memory device includes a first pillar structure in a channel hole inside a word line mold, and a second pillar structure in a string select line hole overlapping the channel hole inside a string select line mold. the first pillar structure includes a first gate insulating layer and a cell channel layer on an inner wall of the channel hole, a variable resistance layer on one side of the cell channel layer, a first filling insulating layer filling the channel hole, and a connection pad in an upper portion of the first filling insulating layer. the second pillar structure includes a second gate insulating layer on an inner wall of the string select line hole, a select channel layer on one side of the second gate insulating layer, and a second filling insulating layer filling the string select line hole on the select channel layer.
