Samsung electronics co., ltd. (20240210838). METHOD OF DESIGNING MASK LAYOUT FOR IMAGE SENSOR simplified abstract
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METHOD OF DESIGNING MASK LAYOUT FOR IMAGE SENSOR
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METHOD OF DESIGNING MASK LAYOUT FOR IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240210838 titled 'METHOD OF DESIGNING MASK LAYOUT FOR IMAGE SENSOR
The abstract of this patent application describes a method for designing mask layouts, including the use of preliminary assist patterns and optical proximity correction models.
- Designing a preliminary mask layout
- Inserting preliminary assist patterns to create multiple target mask layouts
- Generating an optical proximity correction model based on the target layouts
- Obtaining mask design images using the OPC model
- Extracting mask contour images
- Selecting target patterns
- Producing a mask based on target layouts
- Forming a real pattern on a substrate
- Selecting a final pattern based on the formed real pattern
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Integrated circuit design
Problems Solved: - Improving mask layout design efficiency - Enhancing pattern accuracy in semiconductor manufacturing
Benefits: - Increased precision in mask design - Streamlined manufacturing processes - Higher quality semiconductor products
Commercial Applications: Title: Advanced Mask Layout Design Method for Semiconductor Manufacturing Description: This technology can be utilized by semiconductor companies to optimize mask layouts and improve the quality of their products, leading to enhanced competitiveness in the market.
Questions about Mask Layout Design Method: 1. How does the use of preliminary assist patterns improve the efficiency of mask layout design? 2. What are the key advantages of generating an optical proximity correction model in this method?
Original Abstract Submitted
a mask layout design method includes designing a preliminary mask layout, designing a plurality of target mask layouts by inserting a plurality of preliminary assist patterns into the preliminary mask layout, generating an optical proximity correction (opc) model based on the plurality of target mask layouts, obtaining a plurality of mask design images by using the opc model, extracting a plurality of mask contour images, selecting a plurality of target patterns, producing a mask based on the plurality of target mask layouts, forming a real pattern on a substrate based on the mask, and selecting a final pattern from among the plurality of target patterns based on the formed real pattern. the preliminary mask layout includes a mask layout defining a pixel isolation structure that isolates a plurality of pixels, and the preliminary assist pattern has at least one of a cross or rectangular shape.
