Samsung electronics co., ltd. (20240206188). FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract
FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES
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FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206188 titled 'FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES
The present invention pertains to ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices. The ferroelectric capacitor comprises a first electrode, a second electrode facing the first electrode, a ferroelectric layer between the first electrode and the second electrode, and an interfacial layer between the ferroelectric layer and the first electrode or between the ferroelectric layer and the second electrode. The ferroelectric layer contains hafnium-based oxide, while the interfacial layer contains HfO.
- Ferroelectric capacitor with hafnium-based oxide in the ferroelectric layer
- Interfacial layer containing HfO
- Suitable for use in transistors, memory devices, and other ferroelectric applications
- Improved performance and reliability due to the unique composition of the layers
- Method of manufacturing ferroelectric devices with enhanced properties
Potential Applications: - Electronics industry for memory devices - Semiconductor manufacturing for transistors - Research and development for advanced materials
Problems Solved: - Enhancing performance and reliability of ferroelectric devices - Improving memory storage capabilities - Addressing challenges in semiconductor manufacturing
Benefits: - Increased efficiency in electronic devices - Enhanced data retention in memory devices - Improved overall performance of ferroelectric applications
Commercial Applications: Title: Advanced Ferroelectric Capacitors for Enhanced Electronic Devices This technology can be utilized in the production of high-performance memory devices, transistors, and other electronic components. It has the potential to revolutionize the semiconductor industry by offering improved reliability and efficiency in electronic devices.
Questions about Ferroelectric Capacitors: 1. How do ferroelectric capacitors differ from traditional capacitors? Ferroelectric capacitors have a unique ferroelectric layer that can retain polarization, unlike traditional capacitors that store charge.
2. What are the key advantages of using hafnium-based oxide in ferroelectric capacitors? Hafnium-based oxide offers improved performance and reliability in ferroelectric capacitors compared to other materials.
Original Abstract Submitted
the present invention relates to ferroelectric capacitors, transistors, memory device, and method of manufacturing ferroelectric devices. the ferroelectric capacitor includes a first electrode, a second electrode facing the first electrode, a ferroelectric layer between the first electrode and the second electrode, and an interfacial layer between the ferroelectric layer and the first electrode or between the ferroelectric layer and the second electrode. the ferroelectric layer includes hafnium-based oxide. the interfacial layer includes hfo.
