Samsung electronics co., ltd. (20240206177). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jaeduk Lee of Seongnam-si (KR)
Junghoon Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206177 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation:
The semiconductor device described in the patent application features a unique stack structure with gate layers and interlayer insulating layers arranged vertically. A channel hole runs through the stack structure, housing a core region that extends within it. A channel layer sits on the side surface of the core region, with a first dielectric layer, a data storage layer, and a second dielectric layer placed between the channel layer and the gate layers. Additionally, a pad pattern is located on the core region, within the channel hole, and in contact with the channel layer.
Key Features and Innovation:
- Stack structure with gate layers and interlayer insulating layers
- Channel hole penetrating the stack structure vertically
- Core region extending within the channel hole
- Channel layer on the side surface of the core region
- First dielectric layer, data storage layer, and second dielectric layer between the channel layer and gate layers
- Pad pattern on the core region, in the channel hole, and in contact with the channel layer
Potential Applications: This technology could be applied in the semiconductor industry for advanced memory storage devices, high-performance computing systems, and integrated circuits.
Problems Solved: This innovation addresses the need for improved data storage capabilities, enhanced computing speed, and more efficient semiconductor device design.
Benefits: The benefits of this technology include increased data storage capacity, faster processing speeds, and optimized semiconductor device performance.
Commercial Applications: Potential commercial applications of this technology could include the production of next-generation memory devices, high-speed processors, and advanced electronic components for various industries.
Questions about the Technology: 1. How does this semiconductor device improve data storage efficiency compared to existing technologies? 2. What are the potential implications of this innovation for the semiconductor industry in terms of performance and cost-effectiveness?
Original Abstract Submitted
a semiconductor device including a stack structure including gate layers and interlayer insulating layers spaced apart in a vertical direction, a channel hole penetrating the stack structure in the vertical direction, a core region extending within the channel hole, a channel layer disposed on a side surface of the core region, a first dielectric layer, a data storage layer and a second dielectric layer, which are disposed between the channel layer and the gate layers, and a pad pattern disposed on the core region, in the channel hole, and in contact with the channel layer. a first horizontal distance between a side surface of a first portion of an uppermost gate layer and an outer side surface of the channel layer is greater than a second horizontal distance between a side surface of a second portion of the uppermost gate layer and an outer side surface of the pad pattern.
