Samsung electronics co., ltd. (20240206149). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206149 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The semiconductor device described in the abstract consists of various layers and components arranged in a specific configuration to achieve a desired functionality.
- Source line: Extends in a first horizontal direction on the substrate.
- Channel layer: Extends vertically with a first end on the source line and a second end with a trap layer.
- Trap layer: Positioned on the channel layer sidewall.
- Gate insulating layer: Located on the trap layer's outer surface.
- Word line: Extends in a second horizontal direction and is placed on the gate insulating layer.
- Drain area: Contains a metal or metal nitride and is situated on the second end of the channel layer.
- Bit line: Positioned on the drain area in the first horizontal direction.
Key Features and Innovation: - Unique configuration of layers and components for efficient semiconductor device operation. - Specific placement and orientation of source line, channel layer, trap layer, gate insulating layer, word line, drain area, and bit line.
Potential Applications: - Semiconductor manufacturing industry for advanced electronic devices. - Integrated circuits, memory storage, and logic circuits.
Problems Solved: - Enhanced performance and functionality of semiconductor devices. - Improved efficiency and reliability in electronic applications.
Benefits: - Increased speed and efficiency of electronic devices. - Higher performance and reliability in semiconductor operations.
Commercial Applications: - Potential use in the production of smartphones, computers, and other electronic devices. - Market implications in the semiconductor industry for improved technology and product development.
Questions about the technology: 1. How does the specific configuration of layers and components contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in manufacturing and implementing this innovative semiconductor technology?
Frequently Updated Research: - Ongoing research in semiconductor materials, device design, and manufacturing processes. - Advancements in semiconductor technology for future applications and developments.
Original Abstract Submitted
a semiconductor device includes a source line extending in a first horizontal direction on a substrate, a channel layer extending in a vertical direction perpendicular to an upper surface of the substrate, and including a first end, a second end opposite to the first end, and a channel layer sidewall connecting the first end with the second end, the first end being disposed on the source line, a trap layer disposed on the channel layer sidewall, a gate insulating layer disposed on an outer surface of the trap layer, a word line disposed on at least one sidewall of the gate insulating layer and extending in a second horizontal direction crossing the first horizontal direction, a drain area disposed on the second end of the channel layer and including a metal or metal nitride, and a bit line disposed on the drain area and extending in the first horizontal direction.
