Samsung electronics co., ltd. (20240204092). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204092 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The semiconductor device described in the abstract consists of several layers and components, including a channel layer, lower barrier layer with first impurities, upper barrier layer with second impurities of higher concentration, gate electrode, gate semiconductor layer, and a source and drain on the channel layer.
- The device features a unique structure with multiple layers and impurities to enhance its performance.
- The presence of different impurity concentrations in the barrier layers helps in controlling the flow of current through the device.
- The gate electrode and gate semiconductor layer play a crucial role in the functioning of the device by enabling the modulation of current flow.
- The source and drain components are strategically placed on the channel layer to facilitate the desired electrical connections.
Potential Applications: - This semiconductor device can be used in various electronic applications where precise control of current flow is required. - It can be utilized in the development of advanced integrated circuits and microprocessors.
Problems Solved: - The device addresses the need for efficient current modulation and control in semiconductor devices. - It provides a solution for enhancing the performance and functionality of electronic components.
Benefits: - Improved efficiency and performance of electronic devices. - Enhanced control over current flow in semiconductor applications.
Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Current Control This technology can be commercially applied in the manufacturing of high-performance electronic devices such as smartphones, computers, and other consumer electronics. The market implications include the potential for increased efficiency and functionality in electronic products.
Questions about the technology: 1. How does the presence of different impurity concentrations in the barrier layers affect the performance of the semiconductor device? 2. What role do the gate electrode and gate semiconductor layer play in the modulation of current flow in the device?
Original Abstract Submitted
a semiconductor device includes a channel layer, a lower barrier layer on the channel layer and including first impurities, an upper barrier layer arranged on the lower barrier layer and including second impurities having a concentration greater than a concentration of the first impurities, a gate electrode on the upper barrier layer, a gate semiconductor layer between the upper barrier layer and the gate electrode, and a source and a drain that are on the channel layer and are spaced apart from each other.
