Samsung electronics co., ltd. (20240204031). PIXEL OF IMAGE SENSOR AND IMAGE SENSOR simplified abstract
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PIXEL OF IMAGE SENSOR AND IMAGE SENSOR
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PIXEL OF IMAGE SENSOR AND IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204031 titled 'PIXEL OF IMAGE SENSOR AND IMAGE SENSOR
The abstract describes a pixel of an image sensor and a backside illuminated image sensor. The pixel includes a semiconductor substrate with a photoelectric conversion region, a floating diffusion region, and a first vertical transfer gate.
- Semiconductor substrate with photoelectric conversion region
- Floating diffusion region
- First vertical transfer gate
- Structure inclined with a first angle less than 90 degrees
- Backside illuminated image sensor
Potential Applications: - Digital cameras - Smartphones - Surveillance cameras - Medical imaging devices
Problems Solved: - Improved image quality - Enhanced low-light performance - Reduced noise in images
Benefits: - Higher sensitivity - Better image quality - Improved performance in low-light conditions
Commercial Applications: Title: "Advanced Image Sensors for Enhanced Photography" This technology can be used in various commercial applications such as smartphone cameras, digital cameras, and surveillance systems, enhancing image quality and performance in low-light conditions.
Questions about the technology: 1. How does the structure of the first vertical transfer gate impact the performance of the image sensor? 2. What advantages does a backside illuminated image sensor offer compared to traditional image sensors?
Frequently Updated Research: Researchers are constantly working on improving the sensitivity and performance of image sensors for various applications, including photography and medical imaging. Stay updated on the latest advancements in image sensor technology to understand the potential for future innovations.
Original Abstract Submitted
a pixel of an image sensor and a backside illuminated image sensor are provided. the pixel includes a semiconductor substrate including a first surface and a second surface, a photoelectric conversion region formed between the first surface and the second surface of the semiconductor substrate, a floating diffusion region formed on the first surface and spaced apart from the photoelectric conversion region in a vertical direction, and a first vertical transfer gate formed inside a recess extending from the first surface of the semiconductor substrate into the inside of the semiconductor substrate and forming a first transfer channel between the photoelectric conversion region and the floating diffusion region, wherein the first vertical transfer gate may have a structure inclined with a first angle less than 90 degrees with respect to the first surface.
