Samsung electronics co., ltd. (20240204025). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Byeongtaek Bae of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204025 titled 'IMAGE SENSOR
The image sensor described in the patent application includes a substrate with a first photoelectric conversion region and an isolation region that defines the first photoelectric conversion region vertically from the first surface.
- The isolation region consists of a first semiconductor pattern covering the inner wall of a trench, an insulating film covering the inner wall of the first semiconductor pattern, a second semiconductor pattern covering the lower portion of the insulating film, and a conductive pattern covering the upper portion of the insulating film and the uppermost surface.
- The vertical distance from the first surface to the uppermost surface of the first semiconductor pattern is the same as the vertical distance to the uppermost surface of the conductive pattern.
Potential Applications:
- This technology can be used in digital cameras, smartphones, and other devices that require high-quality image sensors.
- It can also be applied in surveillance systems, medical imaging equipment, and automotive cameras.
Problems Solved:
- The technology addresses the need for improved image sensor performance and efficiency.
- It provides a solution for isolating photoelectric conversion regions within the substrate effectively.
Benefits:
- Enhanced image sensor performance with improved isolation of photoelectric conversion regions.
- Increased efficiency and reliability in capturing and processing images.
Commercial Applications:
- The technology has significant commercial potential in the consumer electronics industry, particularly in the development of advanced digital imaging devices.
- It can also be utilized in industrial applications such as machine vision systems and security cameras.
Prior Art:
- Prior research in semiconductor manufacturing processes and image sensor technology may provide insights into similar approaches to isolating photoelectric conversion regions within substrates.
Frequently Updated Research:
- Ongoing research in semiconductor materials and fabrication techniques may lead to further advancements in image sensor technology, including improved isolation methods for photoelectric conversion regions.
Questions about Image Sensor Technology: 1. How does the isolation region in the image sensor contribute to overall performance? 2. What are the key differences between this image sensor design and traditional image sensor structures?
Original Abstract Submitted
provided is an image sensor including a substrate including a first photoelectric conversion region, and an isolation region arranged in the substrate vertically from the first surface and defining the first photoelectric conversion region, wherein the isolation region includes a first semiconductor pattern conformally covering an inner wall of a trench, an insulating film conformally covering an inner wall of the first semiconductor pattern, a second semiconductor pattern conformally covering an inner wall of a lower portion of the insulating film, and a conductive pattern covering an inner wall of an upper portion of the insulating film and an uppermost surface and an inner wall of the second semiconductor pattern, wherein a vertical distance from the first surface to the uppermost surface of the first semiconductor pattern is substantially the same as a vertical distance from the first surface to the uppermost surface of the conductive pattern.
