Samsung electronics co., ltd. (20240204015). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204015 titled 'IMAGE SENSOR
The abstract of the patent application describes an image sensor with a pixel that includes a photoelectric conversion region, a floating diffusion region, and a vertical transfer gate in a semiconductor substrate.
- The pixel has a photoelectric conversion region in the semiconductor substrate.
- A floating diffusion region is spaced apart from the photoelectric conversion region.
- A vertical transfer gate extends into the semiconductor substrate from the first surface.
- A transfer channel is between the photoelectric conversion region and the floating diffusion region.
Potential Applications: - Digital cameras - Smartphones - Surveillance systems - Medical imaging devices
Problems Solved: - Improved image quality - Enhanced low-light performance - Higher resolution images
Benefits: - Higher sensitivity - Reduced noise - Faster image capture
Commercial Applications: Title: Advanced Image Sensors for High-Resolution Cameras This technology can be used in high-end digital cameras, smartphones, and other imaging devices, catering to professionals and photography enthusiasts. The market implications include improved image quality, better low-light performance, and higher resolution capabilities.
Questions about Image Sensors: 1. How do image sensors improve image quality in digital cameras?
- Image sensors enhance image quality by increasing sensitivity and reducing noise, resulting in clearer and sharper images.
2. What are the potential applications of image sensors in medical imaging devices?
- Image sensors can be used in medical imaging devices to capture high-quality images for diagnostic purposes, improving patient care and treatment outcomes.
Original Abstract Submitted
an image sensor includes at least one pixel, and the pixel includes a photoelectric conversion region in a semiconductor substrate having a first surface and a second surface, a floating diffusion region spaced apart from the photoelectric conversion region in the semiconductor substrate, and a vertical transfer gate that extends into the semiconductor substrate from the first surface of the semiconductor substrate. a transfer channel is between the photoelectric conversion region and the floating diffusion region.
