Samsung electronics co., ltd. (20240204013). IMAGE SENSOR simplified abstract
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204013 titled 'IMAGE SENSOR
The abstract describes an image sensor with pixels containing photoelectric conversion regions and floating diffusion regions, along with pixel transistors and transmission gates of varying widths.
- Simplified Explanation: The patent application is for an image sensor that has pixels with specific components to improve image quality and performance.
- Key Features and Innovation:
- Pixels with photoelectric conversion and floating diffusion regions - Pixel transistors with transmission gates of different widths - Improved image sensor design for better functionality
- Potential Applications:
- Digital cameras - Smartphones - Surveillance systems - Medical imaging devices
- Problems Solved:
- Enhancing image quality - Improving sensor performance - Increasing sensitivity to light
- Benefits:
- Higher quality images - Enhanced sensor capabilities - Improved low-light performance
- Commercial Applications:
- Manufacturers of digital cameras and smartphones - Security camera companies - Medical equipment manufacturers
- Questions about Image Sensors:
1. How do image sensors impact the quality of photographs? 2. What are the key components of an image sensor and how do they work?
- Frequently Updated Research:
- Ongoing studies on improving image sensor technology - Research on new materials for sensor components
Overall, this patent application focuses on enhancing image sensor performance through innovative design features, which can have a significant impact on various industries that rely on high-quality imaging technology.
Original Abstract Submitted
an image sensor includes a substrate having a plurality of pixels. each pixel includes a photoelectric conversion region and a floating diffusion region in the substrate, a pixel transistor including a pixel gate on the first surface of the substrate, a first transmission gate between the photoelectric conversion region and the floating diffusion region, extending into the substrate, and having a first width in a horizontal direction, and a second transmission gate between the photoelectric conversion region and the floating diffusion region, arranged between the pixel gate and the first transmission gate when viewed in a plan view, and having a second width less than the first width in the horizontal direction.
