Samsung electronics co., ltd. (20240203989). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jinbum Kim of Suwon-si (KR)

Gyeom Kim of Suwon-si (KR)

Youngkwang Kim of Suwon-si (KR)

Chanyoung Kim of Suwon-si (KR)

Jangwoo Park of Suwon-si (KR)

Sangmoon Lee of Suwon-si (KR)

Sujin Jung of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240203989 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

The semiconductor device described in the abstract consists of a substrate with a p-type metal-oxide-semiconductor (MOS) field-effect transistor (FET) region and an n-type MOSFET region. It also includes active patterns, channel patterns, source/drain patterns, and gate electrodes on the active patterns.

• The device features a p-type MOSFET region and an n-type MOSFET region on the substrate.
• Active patterns are present on both regions, with corresponding channel patterns and source/drain patterns.
• Gate electrodes are placed on the channel patterns to control the flow of current in the device.

Potential Applications: - This semiconductor device can be used in various electronic applications requiring precise control of current flow. - It can be utilized in integrated circuits, microprocessors, and other semiconductor devices.

Problems Solved: - Provides a solution for controlling current flow in both p-type and n-type regions of a semiconductor device. - Enhances the efficiency and performance of electronic devices by optimizing current flow.

Benefits: - Improved functionality and performance of electronic devices. - Enhanced control over current flow in semiconductor devices.

Commercial Applications: Title: Advanced Semiconductor Device for Enhanced Electronic Control This technology can be applied in the development of high-performance electronic devices, leading to improved efficiency and functionality in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the presence of both p-type and n-type regions enhance the performance of the semiconductor device? 2. What are the specific advantages of having gate electrodes on the channel patterns in this semiconductor device?

Original Abstract Submitted

a semiconductor device includes a substrate including a p-type metal-oxide-semiconductor (mos) field-effect transistor (fet) (pmosfet) region and an n-type mosfet (nmosfet) region, a first active pattern on the pmosfet region, a second active pattern on the nmosfet region, a first channel pattern and a first source/drain pattern on the first active pattern, the first channel pattern connected to the first source/drain pattern, a second channel pattern and a second source/drain pattern provided on the second active pattern, the second channel pattern connected to the second source/drain pattern, and a gate electrode on the first channel pattern and the second channel pattern.