Samsung electronics co., ltd. (20240203988). SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION simplified abstract
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SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION
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SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203988 titled 'SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION
The semiconductor device described in the abstract includes a gate separation region, isolation region, interlayer insulating layers, and gate line structures.
- The device features a gate separation region with a gap fill layer and a buffer structure.
- The buffer structure includes a buffer liner between the gap fill layer and the isolation region, as well as between the end portions of the gate line structures and the side surfaces of the gap fill layer.
- The gate separation region is positioned between the end portions of the gate line structures facing each other and the interlayer insulating layers.
Potential Applications:
- This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications.
- It can improve the performance and reliability of integrated circuits by enhancing the isolation between active regions.
Problems Solved:
- Provides improved isolation between active regions in semiconductor devices.
- Enhances the structural integrity of gate line structures in the device.
Benefits:
- Increased efficiency and reliability of semiconductor devices.
- Enhanced performance of integrated circuits.
- Improved manufacturing processes for advanced electronic components.
Commercial Applications:
- This technology can be utilized in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics.
- It has potential applications in the automotive industry for advanced driver assistance systems and in industrial automation for control systems.
Questions about the technology: 1. How does the buffer structure in the gate separation region contribute to the overall performance of the semiconductor device? 2. What are the specific advantages of having interlayer insulating layers in the device design?
Original Abstract Submitted
a semiconductor device including a gate separation region is provided. the semiconductor device includes an isolation region between active regions; interlayer insulating layers on the isolation region; gate line structures overlapping the active regions, disposed on the isolation region, and having end portions facing each other; and a gate separation region disposed on the isolation region, and disposed between the end portions of the gate line structures facing each other and between the interlayer insulating layers. the gate separation region comprises a gap fill layer and a buffer structure, the buffer structure includes a buffer liner disposed between the gap fill layer and the isolation region, between the end portions of the gate line structures facing each other and side surfaces of the gap fill layer, and between the interlayer insulating layers and the side surfaces of the gap fill layer.
