Samsung electronics co., ltd. (20240203980). INPUT/OUTPUT INTERFACE CELL, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract
INPUT/OUTPUT INTERFACE CELL, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyunjeong Roh of Suwon-Si (KR)
Seonkyeong Kim of Suwon-Si (KR)
INPUT/OUTPUT INTERFACE CELL, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203980 titled 'INPUT/OUTPUT INTERFACE CELL, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of two I/O interface cell regions, each containing a set of electrostatic discharge (ESD) diodes, a driver, and a through silicon via (TSV) with wiring patterns and via patterns for electrical connections.
- The first I/O interface cell region includes multiple first ESD diodes, a first driver, and a first TSV with wiring patterns to connect them.
- The second I/O interface cell region contains a subset of second ESD diodes, a second driver, and a second TSV with wiring patterns to connect them and the subset of ESD diodes.
- The remaining second ESD diodes are separated from the second driver and TSV in the second region.
Potential Applications: - This technology can be used in various semiconductor devices requiring ESD protection and efficient signal transmission. - It can be applied in integrated circuits, microprocessors, and other electronic devices where ESD protection is crucial.
Problems Solved: - Provides effective ESD protection for semiconductor devices. - Enables efficient signal transmission within the device.
Benefits: - Enhanced reliability and durability of semiconductor devices. - Improved performance and longevity of electronic components.
Commercial Applications: - This technology can be utilized in the manufacturing of consumer electronics, automotive electronics, and industrial equipment. - It has implications for the semiconductor industry, particularly in the development of advanced electronic devices.
Questions about the technology: 1. How does the separation of ESD diodes in the second region benefit the overall functionality of the semiconductor device? 2. What are the specific advantages of using through silicon vias (TSVs) in this semiconductor device design?
Frequently Updated Research: - Stay updated on advancements in ESD protection technologies and semiconductor manufacturing processes to enhance the performance of this device.
Original Abstract Submitted
a semiconductor device includes: a first i/o interface cell region having a plurality of first electrostatic discharge (esd) diodes, a first driver and a first through silicon via (tsv) disposed therein and having first wiring patterns and first via patterns for electrically connecting the plurality of first esd diodes, the first driver and the first tsv; and a second i/o interface cell region having a plurality of second esd diodes, a second driver and a second tsv disposed therein and having second wiring patterns and second via patterns for electrically connecting the second driver, the second tsv and a subset of the plurality of second esd diodes, wherein the second esd diodes other than the subset are separated from the second driver and the second tsv.
