Samsung electronics co., ltd. (20240203875). SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEMS INCLUDING A SEMICONDUCTOR DEVICE simplified abstract
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SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEMS INCLUDING A SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEMS INCLUDING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203875 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEMS INCLUDING A SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a first semiconductor structure overlapping a second semiconductor structure, with gate electrodes, channel structures, gate separation regions, upper isolation regions, and contact plugs.
- The device features gate electrodes spaced apart in one direction, with channel structures passing through them.
- Gate separation regions extend in another direction, while upper isolation regions divide the upper gate electrode into sub-gate electrodes.
- Each upper isolation region has a region extending in a third direction, and the first sub-gate electrode has pad regions of different widths in a fourth direction.
- The first sub-gate electrode is connected to one of the contact plugs.
Potential Applications: - This technology can be applied in the semiconductor industry for advanced electronic devices. - It can be used in the development of high-performance integrated circuits.
Problems Solved: - This technology addresses the need for improved semiconductor device structures with enhanced functionality and performance.
Benefits: - Enhanced efficiency and performance in semiconductor devices. - Improved integration and miniaturization capabilities in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices such as smartphones, tablets, and computers, leading to improved functionality and user experience. The market implications include increased demand for advanced semiconductor devices in various industries.
Questions about Semiconductor Device Technology: 1. How does the design of the gate electrodes contribute to the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production processes?
Frequently Updated Research: Researchers are continually exploring new materials and structures to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in semiconductor technology to remain at the forefront of innovation.
Original Abstract Submitted
a semiconductor device including a first semiconductor structure overlapping a second semiconductor structure, the second semiconductor structure having first and second regions and including a plate layer; gate electrodes spaced apart from each other in a first direction; channel structures passing through the gate electrodes; gate separation regions extending in a second direction; first and second upper isolation regions dividing an upper gate electrode into first, second and third sub-gate electrodes between adjacent gate separation regions; and contact plugs extending in the first direction, each of the first and second upper isolation regions has a region extending in a third direction, and the first sub-gate electrode has a first pad region having a first width and a second pad region having a second width narrower than the first width in a fourth direction, and the first sub-gate electrode is connected to one of the contact plugs.
