Samsung electronics co., ltd. (20240203788). METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME
Organization Name
Inventor(s)
Eunhyoung Cho of Suwon-si (KR)
METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240203788 titled 'METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME
Simplified Explanation: The patent application describes a method of selectively forming a layer using atomic layer deposition on a substrate with different regions and surfaces.
Key Features and Innovation:
- Selective formation of layers using atomic layer deposition
- Utilization of reaction inhibitors to control layer formation
- Conversion of reaction inhibition layers into deposition layers
- Precise control over the deposition process
- Enhanced efficiency and accuracy in layer formation
Potential Applications: This technology can be applied in various industries such as semiconductor manufacturing, nanotechnology, thin film coatings, and electronic device production.
Problems Solved: This technology addresses the challenges of precise layer formation, control over deposition processes, and improving the efficiency of atomic layer deposition.
Benefits:
- Enhanced control and precision in layer formation
- Improved efficiency and accuracy in deposition processes
- Versatile applications across different industries
- Potential for cost savings in manufacturing processes
Commercial Applications: The technology can be utilized in semiconductor fabrication, nanomaterial synthesis, surface modification, and advanced electronic device manufacturing, leading to improved product quality and production efficiency.
Prior Art: Readers can explore prior research on atomic layer deposition, surface modification techniques, and materials science to understand the background of this technology.
Frequently Updated Research: Stay updated on the latest advancements in atomic layer deposition techniques, surface engineering, and nanomaterial synthesis for potential improvements and innovations in this field.
Questions about Atomic Layer Deposition: 1. What are the key advantages of using atomic layer deposition in comparison to other thin film deposition techniques? 2. How does the utilization of reaction inhibitors contribute to the selective formation of layers in atomic layer deposition processes?
Original Abstract Submitted
a method of selectively forming a layer according to atomic layer deposition includes providing a substrate which includes a first region consisting of a first material and having a first surface and a second region consisting of a second material and having a second surface, forming a first reaction inhibition layer on the second surface using a reaction inhibitor selectively adsorbed on the second surface, selectively forming a first deposition layer on the first surface using a first precursor and a first reactant, wherein the first reactant reacts with the first precursor to form an atomic layer and does not react with the reaction inhibitor to form the atomic layer, and converting the first reaction inhibition layer on the second surface into a second deposition layer using a second reactant which reacts with the first reaction inhibition layer to form the atomic layer.
